single event effect

Modeling and Hardening of Single Event Effect in Integrate Circuit

集成电路单粒子效应建模与加固方法研究

When the power supply chip suffering from radiation environment, the output voltage of which will change and be long time deviation from standard level because of the effect of Single Event Transients ( SETs).

暴露于辐射环境中的电源芯片在单粒子瞬变（Single Event Transients，SETs）作用下，将产生输出电压跳变，长时间偏离正常供电电平的情况。

Effects of pulsed laser parameters such as laser wavelength, beam spot size, pulse energy and pulse duration on threshold energy in laser simulating Single Event Effect testing are analyzed.

分析了在激光模拟单粒子效应试验中激光波长、束斑大小、脉冲能量、脉冲宽度等脉冲激光参数对阈值能量的影响。

The Single Event Effect ( SEE) simulation experiment was carried out on proton accelerators for Static Random Access Memories ( SRAMs).

应用质子直线加速器进行了静态随机存取存储器（SRAM）的单粒子效应模拟实验研究。