source plasma

The development of thyristor puls plasma arc welding power source is introduced in this paper.

本文介绍了晶闸管脉冲等离子弧焊电源的研制成果.

In the plasma system, there were C2H2 and CH3~, the material source to produce carbon film.

在等离子体反应体系中存在着碳膜生存的物质源CH2和CH3。

ZrN thin films were prepared on 45 # steel by using ECR-microwave plasma source enhanced deposition.

利用ECR - 微波等离子溅射沉积技术不同偏压下在45 # 钢基体上制备了ZrN薄膜.

Development of Plasma Intermediate Frequency Pulse Power Source and Study on Azotize Effect Comparison

等离子体中频脉冲电源研制及渗氮效果比较研究

A Novel Pulse Plasma Light Source for CTCP Technology in Printing Industry

一种用于CTCP技术的新型脉冲等离子体光源

Since the launch of the global ITER project, many scientists have done a lot of work in the plasma of controlled thermonuclear fusion research, based on the high-energy negative hydrogen ion source neutral beam injection.

自全球ITER计划启动以来，各国在等离子体受控热核聚变研究中，基于高能负氢离子源中性束注入方面做了大量的工作。

TiN coating for inner surface modification by grid enhanced plasma source ion implantation

内表面栅极等离子体源离子注入TiN薄膜及其特性研究

microplate modified reit ′ s method used for testing alanine aminotransferase in source plasma

微量滴定板改良赖氏试管法检测血浆丙氨酸氨基转移酶

Filtered Cathodic Arc Plasma Source and Thin Film Deposition

磁过滤的阴极弧等离子体源及其薄膜制备

Due to the sample being introduced as an aerosol through the innermost concentric tube of the plasma source at a frequency of about 27 MHz, the skin effect occurs.

由于样品以气溶胶的形式通过最中间同心管引入频率为27MHz的等离子光源，出现趋肤效应。

The capacitively coupled plasma ( CCP) source is an important tool for etching profile of thin gate oxide with high fidelity due to an independent control of ion flux and energy.

甚高频容性耦合等离子体（CCP）是一种主要的刻蚀工具。由于其能分别控制离子通量和离子能量，通常用于高精度的薄栅极氧化层的刻蚀上。