third-order distortion

Analysis of an AlGaAs/ GaAs HBT's Third-order Intermodulation Distortion Using Volterra Series

应用Volterra级数分析AlGaAs/GaAs HBT的三阶互调失真

A third-order intermodulation distortion ( IMD3) sinker composed of a PMOS FET and a tuned inductor is proposed for linearization of CMOS cascode LNA in this paper.

该文提出了一种由调谐电感和PMOS管构成的3阶互调失真吸收单元来提高线性度。

Based on the Volterra series, expressions describing the third-order intermodulation distortion in CMOS cascode LNAs are derived.

基于伏特拉级数，本文推导出了描述CMOS cascode结构低噪声放大器三阶互调指标的方程。

Airway length from the third round of the width and height dimensions there is a deviation from the time of the impact of swirl ratio, combined with anti-distortion optimization airway variety of data, re-design inlet.

第三轮从气道长向、宽向及高度尺寸存在偏差时对涡流比的影响出发，结合反变形方案优化气道的各种数据，重新设计进气道。

From simulation results, the third-order inter-modulation distortion ratio ( IMD3) can be reduced by-10 dB on average when a two-tone signal is input. Finally, the bias-controlled predistorter has been used in OFDM system.

从仿真结果可以总结出，当系统采用双音信号作为输入时，功率放大器输出的三阶互调失真可以平均减少10dB。最后，将二极管偏压控制预失真器应用于OFDM系统中。

The results show that the third-order dispersion generates distortion to the pulse shape with an oscillatory structure at one of pulse edges.

波形分析显示三阶色散项会引起光脉冲形状发生畸变，使波形中心偏向一侧，在这一侧脉冲沿附近形成拖尾振荡结构。

The second sounding line is close to a 3D/ 2D model, and the third sounding line exhibits stronger static displacement distortion.

测线2接近3D2D模型；测线3具有较强的静位移畸变。

A novel third-order distortion generator which can suppress the residual second-order intermodulation distortion ( IMD2) is presented.

1：对于采用二极管反向平行对的三阶模拟预失真系统，本文提出了一种可以抑制驻留二阶交调（IMD2）信号的新型三阶扰动器。