transistor inverter

Full-bridge dual inverter configuration is adopted by main circuit which is supplied by single power source. IGBT ( insulated gate bipolar transistor) is comparatively chosen as switch component to perform energy transfer and power conversion.

电源主电路是单电源供电，采用输出功率较大的全桥双逆变结构，比较地选取绝缘栅双极型晶体管IGBT作为主控开关功率转换器件。

The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.

以MATLAB／Simulink为仿真工具，建立了以IGBT（绝缘栅双极型晶体管）为开关器件的串联型逆变器仿真模型，对提出的定角控制方法进行了仿真验证。

Study and test of sine pulse width modulation transistor inverter

正弦波脉宽调制型晶体管逆变器的研究与试验

The inverter can be manufactured with the insulation gate bipolar transistor module.

逆变器采用绝缘栅双极晶体管模块制造。