transistor switch

Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

绝缘栅双极二级管 ( IGBT ) 作为一种可控开关, 获得了广泛应用.

A class E amplifier can be constructed using either bipolar transistor or MEMS switch.

分析一种基于E类放大器新型逆变拓扑结构，并且详细分析了该电路的特征。

IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.

IGBT（绝缘栅控双极型晶体管）是电力电子技术中的主流开关功率器件，由于开通／关断速度快、通态压降小等优点，在电力电子装置中得到广泛的应用。

PIN tube is used to achieve the isolation of the switch. Through indirect control PIN tube by transistor, testing speed is increased.

采用PIN管实现了隔离开关的隔离度，并通过三极管间接控制PIN管的偏置提高了测试速度。

Full-bridge dual inverter configuration is adopted by main circuit which is supplied by single power source. IGBT ( insulated gate bipolar transistor) is comparatively chosen as switch component to perform energy transfer and power conversion.

电源主电路是单电源供电，采用输出功率较大的全桥双逆变结构，比较地选取绝缘栅双极型晶体管IGBT作为主控开关功率转换器件。