vacancy diffusion

These results show that the ion beam mixing mechanism of Mo/ Si system is not vacancy diffusion and intra-cascade interstitial diffusion, and the thermal spike model also does not apply.

结果表明，以前的空位扩散机制、单级联间隙原子扩散机制和热峰模型都不能解释Mo/Si体系的离子束混合。

The results showed that: ( 1) TiO2 promoted the sintering of chromic oxide by Ti4+ replacing Cr3+, which restrained the formation of high volatility chrome cation through forming chrome cation vacancy, and therefore caused lattice distortion and increased Cr3+ diffusion rate.

试验结果表明：（1）TiO2通过Ti4+置换Cr3+，抑制了高挥发性铬离子的形成，产生了铬离子空位及引起晶格畸变，增大了Cr3+扩散速率，从而促进了Cr2O3材料烧结。

The diffusion mechanism wherein net atomic migration is from lattice site to an adjacent vacancy.

一种扩散机制,这时候原子的净迁移过程是从晶格结点位置移动到邻近的空位中.