ALN

Reaction-bonding method will be an important method of bonding in thick film paste for AlN substrate.

反应粘结因导热性和热应力等方面的优势，使其成为AlN基板厚膜浆料粘结的重要方式。

AlN precipitation at the full austenite grain boundary would worsen the ductility of the steels.

在奥氏体单相区,由于氮化铝的析出导致钢种的塑性恶化.

The results show that the microstructure of the film is uniform and the grain size is fine. AlN film is the close-packed hexagonal structure with ( 002) preferred orientation.

结果表明膜层组织均匀，晶粒细小，薄膜AIN是呈（002）择优取向的密排六方结构。

Study on Preparation and Property of AlN Solar Energy Absorbing Coating

一种新型太阳能吸收涂层的制备方法及其性能研究

Research Progress in Thermal Conductivity and Sintering Additives of AlN Packaging Material

AlN陶瓷基板材料热导率与烧结助剂的研究进展

Thermodynamic study on interface reaction of ti/ AlN

Ti/AlN陶瓷界面反应的热力学研究

AlN crystals were grown by modified sandwich sublimation method in nitrogen atmosphere.

采用改进的升华法在氮气环境下制备氮化铝单晶体.

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap, which has wurtzite structure too.

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

The performance of thick film paste for AlN substrate was summarized, relating to manufacture of metallic powder, study of bonding manner and improvement on firing process.

介绍了AlN基片所用厚膜浆料的产品性能。从金属粉体的制备，粘结方式探索和烧结工艺的改进等方面综述了该领域的研究进展。

During sintering, the kinds and amount of sintered aids will influence the densification and thermal conductivity coefficient of AlN ceramics.

介绍了在AlN烧结中，烧结助剂的种类和加入量对AlN陶瓷材料的烧结致密度和热传导系数的影响。

A Deposition of AlN Thin Films with Enhanced Reactively Excimer Laser Sputtering Using Gas Discharge

气体放电增强准分子激光溅射反应沉积AlN膜

AlN/ Si3N4 multilayers with different modulation periods and a series of Zr-Si-N composite films with different Si contents were prepared by reactively magnetic sputtering.

本论文采用磁控溅射方法制备不同调制周期的AlN/Si3N4纳米多层膜和一系列不同Si含量的Zr-Si-N复合薄膜。

However, AlN is hard to sinter, which constrains its application.

但AlN难以 烧结, 在很大程度上限制了AlN的应用.

High quality AlN single crystals with typical hexagonal crystal habit were obtained by optimizing growth conditions.

通过优化实验条件制备出了六角形的高质量的氮化铝单晶体.

The phase composition, micro-structure and microwave attenuation of AlN-W composites were characterized by XRD, SEM and network analyzer.

运用XRD、SEM和矢量网络分析仪对AlN-W复相衰减材料的相组成、显微结构和衰减性能进行表征。

Multilayer co-fired AlN ceramic is a type of high performance ceramic that is printed in thick film to form multilayer circuit and fired in a certain atmosphere in high temperature.

多层共烧氮化铝陶瓷是采用厚膜印刷的方式将多层的电路金属化做入氮化铝基板并在特定气氛中高温烧结的一种高性能陶瓷。

Fabrication of AlN/ Al Composites by Si_3N_4/ Al Reaction Sintering

Si3N4/Al反应烧结制备AlN/Al复合材料

The exploration of AlN films doping by Si thermal diffusion.

AlN薄膜热扩散掺杂的探索性研究。

The contrast experiment of slag resistance for Al-AlN-Al_2O_3 sliding plate and Al_2O_3-C sliding plate was carried out by means of crucible method under the conditions of 1 600 ℃ for 3 h and 1 650 ℃ for 3 h.

对Al AlN Al2O3滑板与Al2O3C滑板在1600℃×3h及1650℃×3h条件下，进行了坩埚法抗钢渣侵蚀实验。

The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed.

讨论了PVT法生长AlN晶体所涉及的化学热力学过程和现象。

Study of FEP/ AlN Composites with High Thermal Conductivity and Insulating Properties

聚全氟乙丙烯/氮化铝高导热绝缘复合材料的研究

The technology of AlN ceramic substrate volume production is introduced in this paper.

文章主要介绍氮化铝陶瓷基片生产的关键技术.

So, in this work , AlN thin films were prepared by RF magnetron sputtering deposition method.

所以本文利用射频磁控溅射方法制备AlN薄膜.

These lay the experimental and theoretical foundations for synthesizing AlN from the solid phase metathetical reaction.

为固相复分解反应用于制备AlN材料奠定了理论与实验上的基础.

Conclusion The ALN status is a most important indicator for making treatment pian and prognosis assessment.

结论腋淋巴结状况是制定治疗方案和评估预后的最主要指标.

Reaction Sintering and Properties of AlON-AlN Composite Ceramics

反应烧结制备AlON-AlN复相陶瓷及其性能

Electroless plating method is applied to metallize the AlN sbstrate.

应用化学镀镍的方法实现了氮化铝的金属化.

Low Temperature Growth of AlN Thin Films Deposited by Reactively Pulse-Laser Ablation with Plasma-Assisted

等离子体辅助反应式脉冲激光熔蚀制备AlN薄膜的低温生长

Sn naowire arrays were AC electrodeposited into the pores of anodic aluminum oxide template.

氮化后,非晶的氧化铝模板变成了尖晶石结构的氮氧化铝相(Al_ 2O_3·AlN).

Using a same semiconductor laser scheme, the thermal impedance of diamond thermal management is only 40% of AlN thermal management.

采用完全相同的半导体激光器结构，金刚石膜热沉的热阻仅为氮化铝热沉的40%。