ALN的例句大全

It is suggested that growth temperature of the AlN buffer layer influences GaN morphology by forming different AlN seed size and density on the Si ( 111) substrate during the initial growth of the buffer layer.

进一步解释了GaN外延层表面形貌中凹坑的形成及凹坑与缓冲层生长温度的关系.结果表明，温度的高低通过影响缓冲层初始成核密度和成核尺寸来影响外延层表面形貌。

The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed.

讨论了PVT法生长AlN晶体所涉及的化学热力学过程和现象。

Thermodynamic study on interface reaction of ti/ AlN

Ti/AlN陶瓷界面反应的热力学研究

Multilayer co-fired AlN ceramic is a type of high performance ceramic that is printed in thick film to form multilayer circuit and fired in a certain atmosphere in high temperature.

多层共烧氮化铝陶瓷是采用厚膜印刷的方式将多层的电路金属化做入氮化铝基板并在特定气氛中高温烧结的一种高性能陶瓷。

Reaction-bonding method will be an important method of bonding in thick film paste for AlN substrate.

反应粘结因导热性和热应力等方面的优势，使其成为AlN基板厚膜浆料粘结的重要方式。

The performance of thick film paste for AlN substrate was summarized, relating to manufacture of metallic powder, study of bonding manner and improvement on firing process.

介绍了AlN基片所用厚膜浆料的产品性能。从金属粉体的制备，粘结方式探索和烧结工艺的改进等方面综述了该领域的研究进展。

The effect of laser energy density, pulsed frequency on the construction and properties of AlN thin films prepared by reactively pulsed laser sputtering deposition was discussed. And chemical stability of deposited AlN thin films has been studied in detail.

就反应式脉冲激光溅射淀积制备氮化铝（AlN）薄膜的过程，讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响，并对薄膜的化学稳定性作了比较详细的研究。

A Deposition of AlN Thin Films with Enhanced Reactively Excimer Laser Sputtering Using Gas Discharge

气体放电增强准分子激光溅射反应沉积AlN膜

Low Temperature Growth of AlN Thin Films Deposited by Reactively Pulse-Laser Ablation with Plasma-Assisted

等离子体辅助反应式脉冲激光熔蚀制备AlN薄膜的低温生长

AlN/ Si3N4 multilayers with different modulation periods and a series of Zr-Si-N composite films with different Si contents were prepared by reactively magnetic sputtering.

本论文采用磁控溅射方法制备不同调制周期的AlN/Si3N4纳米多层膜和一系列不同Si含量的Zr-Si-N复合薄膜。

During sintering, the kinds and amount of sintered aids will influence the densification and thermal conductivity coefficient of AlN ceramics.

介绍了在AlN烧结中，烧结助剂的种类和加入量对AlN陶瓷材料的烧结致密度和热传导系数的影响。

The exploration of AlN films doping by Si thermal diffusion.

AlN薄膜热扩散掺杂的探索性研究。

Study of FEP/ AlN Composites with High Thermal Conductivity and Insulating Properties

聚全氟乙丙烯/氮化铝高导热绝缘复合材料的研究

Synthesis of AlN Nanocrystals in Organic Solvent at Atmospheric Pressure and Photoluminescence Study of FEP/ AlN Composites with High Thermal Conductivity and Insulating Properties

纳米氮化铝常压溶剂热合成及其光致发光聚全氟乙丙烯/氮化铝高导热绝缘复合材料的研究

Research Progress in Thermal Conductivity and Sintering Additives of AlN Packaging Material

AlN陶瓷基板材料热导率与烧结助剂的研究进展

Fabrication of AlN/ Al Composites by Si_3N_4/ Al Reaction Sintering

Si3N4/Al反应烧结制备AlN/Al复合材料

Reaction Sintering and Properties of AlON-AlN Composite Ceramics

反应烧结制备AlON-AlN复相陶瓷及其性能

Growth Process of Preferential Orientation of AlN Thin Films by Magnetron Reactive Sputtering

磁控溅射氮化铝薄膜取向生长工艺研究

Influence of Annealing on Electron Field Emission from AlN Films Prepared by RF Reactive Sputtering

热退火对射频反应溅射氮化铝薄膜场电子发射的影响

The results show that the microstructure of the film is uniform and the grain size is fine. AlN film is the close-packed hexagonal structure with ( 002) preferred orientation.

结果表明膜层组织均匀，晶粒细小，薄膜AIN是呈（002）择优取向的密排六方结构。