epitaxial

Research on the epitaxial growth technique of 3C SiC on silicon substrates

硅基3C-SiC薄膜的外延生长技术

The four-probe method is used on very thin samples such as epitaxial wafers and conductive coatings.

四探针法用在非常薄的样品,例如外延晶圆片和导电涂层上.

Spiral growth was observed on the ( 100) face of the above obtained homogeneous epitaxial diamond film.

并通过拉曼散射，扫描电镜、反射高能电子衍射对实验结果进行了检测分析，在（100）面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。

In the bond zone, the grains develop into the coatings in the form of epitaxial growth and the coatings have a good metallic bonding with the substrate.

熔合区晶粒以外延生长方式向熔覆层内部生长，基体与熔覆层呈现良好的冶金结合。

There are three procedures in LED production, namely epitaxial wafer, tube core and encapsulation.

在LED生产过程中, 主要有外延片生长 、 芯片和封装三个环节.

An Easy Method for Judging the Type of Electric Conduction and the Concentration of Charge Carrier in Semiconductor Epitaxial Material

半导体外延材料导电类型及载流子浓度的简易判定法

New method to fabricate 45 ° bi-epitaxial superconducting junctions

制备45°双外延超导结的新工艺

The growth of Epitaxial films of Mercury Cadmium Tellurid ( MCT) with various x values from Te-rich solution in an open tube sliding system is studied.

用开管水平液相外延系统从富Te溶剂中生长了不同x值的MCT薄膜。

A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

The epitaxial films of ternary compound Hg_ ( 1-x) Cd_xSe have been grown on ( 0001) and ( 0001) substrates of CdSe by using chemical vapor transport technique in a closed tube.

应用闭管化学气相输运方法在CdSe衬底（0001）和（0001）面上制备了Hg（1-x）Cd xSe外延膜。

It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.

结果表明外延层具有平坦的异质结界面和良好的晶体特性.

Void defect of molecular beam epitaxial HgCdTe layer grown on GaAs substrate

分子束外延碲镉汞薄膜中VOID缺陷的研究

Epitaxial Growth and Structure Characterization of SiC Film and Fabrication of Graphene

碳化硅薄膜的外延生长、结构表征及石墨烯的制备

Homogeneous , strained epitaxial SiGe films on silicon substrates were used.

在硅基板上使用了均匀、应变的外延SiGe薄膜.

Backwardness in high quality epitaxial wafer has limited greatly the development of Chinese LED industry.

高质量的外延片已经成为中国LED产业发展的主要制约环节.

On the other, because of the strong coupling between the spin, charge, orbital, and lattice degrees of freedom, the physical properties in manganites can be easily tuned by external stimuli such as the epitaxial strain.

另一方面，因为各个自由度间的强烈耦合，锰氧化物的物理性质极易受到如外延应力等外加作用的调控。

Epitaxial Growth of Single Crystalline Aluminum Nitride Films by Reactive Evaporation

Si衬底上用反应蒸发法制备AlN单晶薄膜

Synthesis and Characterization of Novel Tungsten Phosphates 、 Sodium Titanium Oxide 、 Sodium Tin Oxide; Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure

钨磷酸盐、锡酸钠、钛酸钠新化合物合成与结构表征钙钛矿锡酸盐外延薄膜及相关异质结制备与物性研究

"Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array"

GB/T14141-1993硅处延层、扩散层和离子注入层薄层电阻的测定直排四探针法

Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity.

使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性.

Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.

在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质.

And a brief description of the development of epitaxial The number of shape Combination.

并简单描述数形结合发展的外延.

The Theoretical Study of the Hetero-epitaxial Growth for the Infrared Optoelectronic Material HgCdTe

红外光电子材料碲镉汞异质外延结构理论研究

The Area Contact Model of Depletion Layer Width Under Avalanche Breakdown in Si Epitaxial Wafer by a Three-Probe Method

三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型

Epitaxial growth mechanism of YBCO films on Ag single crystals

单晶Ag基底上YBCO膜外延机理的研究

Epitaxial layers of InSb and InAs _ xSb _ ( 1-x ) on ( 111 ) InSb and ( 100 ) GaAs substrate have been grown by MBE technique.

在 ( 111 ) InSb和 ( 100 ) GaAs衬底上,用分子束外延技术生长了InSb和InAs_xSb_ ( 1-x ) 外延层.

A Three-phase Rectifier Bridge Switch Module Based on Fast Recovery Epitaxial Diodes

二极管整流放大伏特计三相超快恢复二极管整流桥开关模块

This paper describes recent progress of GaAs epitaxial material for an electrically tunned diode with constant γ.

本文报道了GaAs常γ电调变容管材料的研究。

The measurements of XRD, SEM and XPS show that the as-grown BNN film is epitaxial single crystal with smooth surface.

X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。

The effects of the thickness of high temperature buffer layer, the growth rate of epitaxial layer and the rich Zn environment on the properties of ZnO films grown by AP-MOCVD were investigated.

研究了高温缓冲层厚度、外延层的生长速率以及富Zn环境对ZnO薄膜生长的影响，优化了生长工艺参数。