epitaxial的例句大全

The growth of Epitaxial films of Mercury Cadmium Tellurid ( MCT) with various x values from Te-rich solution in an open tube sliding system is studied.

用开管水平液相外延系统从富Te溶剂中生长了不同x值的MCT薄膜。

The effects of the thickness of high temperature buffer layer, the growth rate of epitaxial layer and the rich Zn environment on the properties of ZnO films grown by AP-MOCVD were investigated.

研究了高温缓冲层厚度、外延层的生长速率以及富Zn环境对ZnO薄膜生长的影响，优化了生长工艺参数。

The epitaxial films of ternary compound Hg_ ( 1-x) Cd_xSe have been grown on ( 0001) and ( 0001) substrates of CdSe by using chemical vapor transport technique in a closed tube.

应用闭管化学气相输运方法在CdSe衬底（0001）和（0001）面上制备了Hg（1-x）Cd xSe外延膜。

A Three-phase Rectifier Bridge Switch Module Based on Fast Recovery Epitaxial Diodes

二极管整流放大伏特计三相超快恢复二极管整流桥开关模块

The Area Contact Model of Depletion Layer Width Under Avalanche Breakdown in Si Epitaxial Wafer by a Three-Probe Method

三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型

On the other, because of the strong coupling between the spin, charge, orbital, and lattice degrees of freedom, the physical properties in manganites can be easily tuned by external stimuli such as the epitaxial strain.

另一方面，因为各个自由度间的强烈耦合，锰氧化物的物理性质极易受到如外延应力等外加作用的调控。

Spiral growth was observed on the ( 100) face of the above obtained homogeneous epitaxial diamond film.

并通过拉曼散射，扫描电镜、反射高能电子衍射对实验结果进行了检测分析，在（100）面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。

Synthesis and Characterization of Novel Tungsten Phosphates 、 Sodium Titanium Oxide 、 Sodium Tin Oxide; Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure

钨磷酸盐、锡酸钠、钛酸钠新化合物合成与结构表征钙钛矿锡酸盐外延薄膜及相关异质结制备与物性研究

( 100) N/ N~+ Epitaxial Slice of Silicon for MOS

MOS用（100）N/N~+硅外延片

This paper describes recent progress of GaAs epitaxial material for an electrically tunned diode with constant γ.

本文报道了GaAs常γ电调变容管材料的研究。

A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

Epitaxial Growth and Structure Characterization of SiC Film and Fabrication of Graphene

碳化硅薄膜的外延生长、结构表征及石墨烯的制备

Void defect of molecular beam epitaxial HgCdTe layer grown on GaAs substrate

分子束外延碲镉汞薄膜中VOID缺陷的研究

Epitaxial Growth of Single Crystalline Aluminum Nitride Films by Reactive Evaporation

Si衬底上用反应蒸发法制备AlN单晶薄膜

Epitaxial growth mechanism of YBCO films on Ag single crystals

单晶Ag基底上YBCO膜外延机理的研究

Study of GaP: ZnO LED epitaxial layer by microscopical optical method

用微区光学方法研究GaP：ZnO红光外延片

New n ￣+ p Shallow Junction Formation Method by Using Solid State Epitaxial CoSi_2 as Diffusion Source

固相外延CoSi2薄膜作为扩散源形成n~＋p浅结技术研究

Computational modeling and simulation of epitaxial growth process is a frontier domain in the field of manufactory science and material science. Phase-field method as a powerful tool is used to describe complex phase transitions in non-equilibrium state.

材料生长过程的计算机模拟和仿真是当今国际公认的制造科学与材料科学的前沿领域之一，而相场法是一种用于描述非平衡态下复杂相界面演变的强有力工具。

characterization of hg 1-x cd x te epitaxial films on various vicinal planes

不同邻晶面Hg（1-x）Cd xTe外延薄膜的特性分析

in this paper the epitaxial growth mechanism on vicinal gaas ( 001) surface is studied using the kinetic monte carlo simulation method.

用动力学Monte Carlo模拟方法研究了GaAs（001）邻晶面的外延生长机制。