Investigation on the Nature of Flow Pattern Defects in CZ-Si Crystals

Thermal Environment Analysis and Test of CZ-2C/ SD Rocket

CZ-2C/SD火箭热环境分析及试验

The Cz and Bridgman methods are common techniques of crystal growth.

Cz法与Bridgman法是晶体生长中普遍采用的两大技术。

Influence of Swirl Defects in CZ Silicon on Process of Power Transistor

CZ硅单晶中旋涡缺陷对低频大功率管制造的影响

This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.

介绍了直拉法生长单晶硅的基本原理及工艺条件。

Oxygen precipitation is an important subject of defect engineering for CZ silicon.

氧沉淀是直拉硅单晶缺陷工程的重要研究课题。

Appraisal Test of Accelerator CZ Synthesized in New Technology

新工艺合成促进剂CZ的鉴定试验

Development and Applications of the Intelligent Weighing Installation of Model CZ Loader

CZ型装载机智能测重装置的开发与应用

Control of Radiation Defect in CZ Si Radiated by High Energy Particles

高能粒子辐射直拉硅中辐照缺陷的控制

Research on Streak Formation in Growing Single Crystal with Large Size by CZ Method

直拉法生长大尺寸TeO2单晶生长条纹的探讨

The Study of Surface Morphology of YAG Single Crystal Grown by CZ Method

引上法YAG单晶表面形态学的研究

A New Pattern of Recursive Program Transformation& CZ Transformation

递归程序变换的一种新模式一CZ变换

Mechanism of Interaction between Crystal Growth and Crystal Melting in CZ Method

引上法晶体生长和熔化相互作用的机理

Cz Crystal Temperature Distribution in the Finite Element Analysis

Cz法晶体生长中温度场分布的有限元分析

Strategic Running Diagnosis and Analysis of CZ Software Company in Guangxi

广西CZ软件公司的经营战略诊断与分析

I, III and IV were found from this plant for the first time.

I，III和IV为首次从本种植物中得到。

Chapter III mainly describes the development of the Second Athenian League.

第三章着重论述第二次雅典同盟的发展过程。

Development of new textile products ( III): Acetate textiles

纺织新产品的开发（三）：醋酯丝产品

Class III were 24 patients; stable class IV were 6 patients.

其中Ⅱ级30例，Ⅲ级24例，稳定的Ⅳ级6例。

Part III: Doubts on "local resources".

第三部分：对苏力本土资源论的质疑。

Part III: Analysis of internal economic environment, including enterprise current resources and integrated capacity.

第三部分是企业现有资源和综合能力的内部环境分析。