Breakdown的例句大全

Breakdown Characteristics of Nitride Ultra-Thin Gate Oxide

含N超薄栅氧化层的击穿特性

The degradation and breakdown of thin gate oxide film are related with the generation of traps in oxide layer.

薄栅氧化层的退化、击穿与氧化层中和界面陷阱的产生相关。

It is revealed that F N stress induced thin gate oxide breakdown is not simply determined by the total number of the injected holes.

这些新的实验结果表明F-N应力导致的薄栅氧化层的击穿不仅由注入的空穴数量决定。

This paper analyzes impact ionization models of super thin gate oxide breakdown, and gives a detailed description of hole breakdown theories. It lays the foundation for the deep study of super thin gate oxide breakdown theories and for the modeling of super thin gate oxide breakdown.

分析了超薄栅氧化层击穿的碰撞电离模型，并对空穴击穿机理进行了详细描述，为超薄栅氧化层的击穿机理的深入研究及超薄栅氧化层击穿模型的建立奠定了基础。

Review on flow stability and breakdown of thin liquid films

液体薄膜流稳定性和破断特性的研究进展

Results of the research indicated that: ( 1) Three electrode structure bringed in pulse high voltage can increase breakdown voltage and enhance the stabilization of streamer discharge, which is advantageous for production of prompt energetic particle and for increasing the removal efficiency of VOCs.

三种电极结构引入脉冲高压可以提高电极间的击穿电压，并使流光放电更加稳定，产生瞬间的高能粒子，从而提高甲苯和氯苯的脱除效率。

The MOS structure was prepared with as-grown SiO_xN_y film as the gate dielectric, and its electrical properties such as dielectric content, breakdown field and leakage current were investigated by the C-V method.

利用所制备的SiO xN y薄膜作为栅介质层制作了MOS结构，并研究了SiO xN y薄膜的介电常数、击穿电场强度和泄漏电流等电学特性。

Objective: To study the effects of endothelin-1 ( ET-1) on mouse oocyte germinal vesicle breakdown ( GVBD) and extrusion of the first polar body ( PBI).

目的研究内皮素-1（ET-1）对小鼠未成熟卵母细胞生发泡破裂（GVBD）、第一极体（PBⅠ）排出的影响。

The Area Contact Model of Depletion Layer Width Under Avalanche Breakdown in Si Epitaxial Wafer by a Three-Probe Method

三探针测试硅外延片中雪崩击穿时耗尽层宽度的面接触模型

The plan through different position of fault direction components, can compare movement state conveniently, determine the position of the breakdown of the fault accurately, in order to realize the rapid resection, ensure the normal running of the fault part.

这一方案通过对不同位置故障方向元件动作状态的比较，能够方便、准确地确定出故障点的位置，以实现对故障部分的快速切除，确保非故障部分的正常运行。

TESE RESEARCH OF THYRISTOR CHOPPER SPEED GOVERNOR FOR A.c.WOUND-MOTOR Detection of AC Motor Magnetic Torque for Breakdown of Inclined Shaft Winding System

交流绕线型异步电动机晶闸管斩波器调速的实验研究斜井串车提升系统的故障诊断&异步电动机电磁转矩的检测

The development equipment maintenance has experienced run-to-breakdown maintenance, time-base preventive maintenance to predictive maintenance, while the fault diagnosis technology is also developed quickly with it.

设备维修先后经过事后维修、定期维修，到预知性维修几个阶段，而故障诊断技术也随之取得了很快的发展。

Laser-Induced electric breakdown in alkali-halide crystals and resonance time quantization

激光诱导碱金属卤化物晶体电击穿与共振时间量子化

However, it still has some demerits, such as, long time of setting, poor adhesion property, deficiency of strength, slowness of degradation, and being prone to breakdown in contact with liquid at original setting stage.

但磷酸钙骨水泥同时存在固化时间长，粘结性能差，机械性能不足，溶解缓慢，初凝阶段接触体液易崩解等缺点，又使其应用受到一定程度的限制。

The implementation of ONS company equipment management policy has made a tremendous improvement effect for ONS Company. The equipment breakdown time ratio and the maintenance cost decreased obviously.

ONS公司设备维护管理模式优化管理，取得了良好的效果，设备故障率显著降低，设备维修成本有效降低。

We obtained laser induced plasma by laser ablating aluminium with an Nd: YAG laser, using time and space resolved spectroscopy, the effects of ambient gas breakdown on the emission characteristics of laser induced plasma were studied.

我们使用Nd：YAG激光器烧蚀金属Al靶获得等离子体，利用光谱时-空分辨技术，关于环境气体分解及其对等离子体辐射特征的影响进行了研究。

The circuit ′ s working stability is improved greatly through anti-breakdown protection and adding appropriate time-delay circuit.

通过对高压器件的防击穿保护，并增加适当的延时电路，大幅度提高了驱动电路的工作稳定性。

The simplest way to construct milestones is to take the timing information from the work breakdown structure and sequence diagram.

设置里程标最简单的方法是从工作细分结构和任务排序表中提取时间信息。

HRA Event Tree of Personnel Factor Analysis for Pressure Gauge Check System Breakdown

校验压力表系统故障人因分析的HRA事件树

The values of the intrinsic breakdown field of many important binary compound semiconductors and high-k gate dielectrics are calculated.

基于文章提出的关系式，计算了多种重要的二元化合物半导体及高k栅介质的本征击穿电场预期值。