MOSFET的例句大全

In this thesis, direct digital control ( DDC) system of the DC motor speed regulation is designed, with the use of MOSFET, a kind of silicon power field controlled devices. Obvious effect has been achieved when applied in testing site.

本课题应用先进的功率场控器件MOSFET为控制器件，根据加工工艺的要求，设计出直接数字控制型直流调速计算机控制系统，并应用于现场，取得明显的效果。

Realization of Current limited Control through Testing the Saturable Voltage Drop of MOSFET

检测场效应功率晶体管饱和压降实现限流控制

It eliminates the detection error which produced by the non-linearity of the power MOSFET's on-state resistance and the temperature influence, which insures high detection precision.

消除了功率管导通电阻受非线性和温度的影响而产生的检测误差，检测精度高。

Negative bias temperature instability ( NBTI) effect in pMOSFET's, which is induced by the application of negative gate bias and high temperature stress, is one of the key problems for reliability of MOS devices.

在PMOSFET上施加负栅压和高温应力后，出现的NBTI效应是超深亚微米MOS器件中重要的可靠性问题之一。

This paper presents a comprehensive analysis on breakdown voltage design of VD-MOSFET with the terminal structure of field limiting rings.

本文针对VD-MOSFET击穿电压，采用场限环终端结构的耐压设计，并进行了综合分析。

The simulation of hot carrier effect in small geometry MOSFET

小尺寸MOS器件热载流子效应模拟

Final-ly, the programming circuits for the MOSFET& C system are presented.

最后给出了MOSFET&C网络的编程电路。

A deep sub-micrometer NMOSFET non-local transport model for ESD effect

适用于深亚微米NMOSFET ESD效应的非本地传输模型

Modeling of DT ( direct tunneling) current in ultra-thin gate oxide n MOSFET's is researched.

研究了超薄栅氧MOS器件的直接隧穿（direct tunneling，DT）电流模型问题。

An accurate and simple analytical model of threshold voltage for depletion mode MOSFET is presented.

提出一种简单而精确的耗尽型短沟道MOS器件阈电压分析模型，与实验数据吻合良好。

Influence of Silicon Film Thickness and Back Gate upon Characteristics of Fully Depleted Thin Film SIMOX/ SOI MOSFET's

硅膜厚度和背栅对SIMOX／SOI薄膜全耗尽MOSFET特性影响的研究

Micron Size MOSFET's Analytic Model of Threshold Voltage Used to Circuit Simulation

实用于电路模拟的微米级MOSFET开启电压解析模型的研究

Radiation Enhanced Threshold Drift Effect of Short-channel MOSFET

短沟道MOSFET阈值电压辐照增强漂移效应

The influence on threshold voltage and gate capacitance of MOSFETs due to quantum effects

量子效应对MOSFETs阈值电压和栅电容的影响

Through solving possion equation, the characteristics of short-channel MOSFET device is analyzed in details in the following three aspects: the effect of channel length modulation, the change of threshold voltage and potential barrier decrease between source and channel.

通过求解泊松方程，从沟道长度调制效应、阈值电压变化及源极同沟道间的势垒变化三个方面详细分析了短沟道MOSFET的器件特性。

Electron Transportation in Sub-Threshold Region of MOSFET

亚阈值区MOSFET沟道中电子输运

New threshold voltage model for deep submicron buried channel MOSFET's

用于深亚微米埋沟MOSFET的开启电压模型

The proposed MOSFET driver includes dead time controller, DCM controller and gate width controller.

在功率管驱动电路中，包含了死区时间控制功能，DCM功能，功率管栅宽调整功能。

Study for solid-state high-frequency induction heating power source of time-sharing control MOSFET

分时控制MOSFET固态高频感应加热电源研究

A Self-Aligned MOSFET Technology with As Ion Implantation Into Titanium Silicide

As离子注入硅化钛自对准MOS器件技术研究