MOSFET的例句大全

Finally, our simulation result shows that conventional SOI SBSD-MOSFET can effectively suppress thermionic emission leakage current, but it still can not suppress tunneling leakage current.

最后，我们的模拟发现，普通SOI结构SBSD-MOSFET能有效阻挡来自源结的热电子发射泄漏电流，但仍不能阻挡来自漏结的隧穿泄漏电流。

The proposed model has the advantages of more universality, more suitability for SiC in high-field application and seamless calculation of thermionic emission and tunneling current. ( 2) The study on the theoretical model of SiC SBSD-MOSFET.

该模型具有更大的普适性、更适合工作在高场条件下的SiC材料，并且能够连续的计算热电子发射电流和隧穿电流。（2）SiC肖特基势垒源漏MOSFET的理论模型研究。

Optically triggered MOS gated solid state relay is a new switching device, which is composed of an MOS gated thyristor, a phototransistor, an enhanced mode MOSFET and a Zener diode.

光控MOS栅固态继电器是由MOS栅控晶闸管、开关三极管、光电耦合器、增强型MOSFET和齐纳二极管组成的新型开关器件。

Current Conducting Mechanism and 2-D Analytical Drain Current Model for TF SOI PMOSFET

TF SOI PMOSFET的导电机理及漏电流的二维解析模型

The experiment result shows that the holes generated by avalanche can be injected into gate oxide of a NMOSFET biased into snapback, and then both hole trapping and interface state generation can be found.

实验结果发现突发击穿（snapback），偏置下雪崩热空穴注入NMOSFET栅氧化层，产生界面态，同时空穴会陷落在氧化层中。

The behaviors of the Snapback stress in LDD NMOSFET are studied in ultra-short and ultra-thin LDD NMOSFET' s. The avalanche hot holes and electrons together inject into oxide during Snapback stress, much interface states and neutral electron traps are generated.

对超短超薄LDD nMOSFET中的Snapback应力特性进行了研究。Snapback应力过程中雪崩热空穴和电子同时注入栅氧化层，会产生界面态和大量中性电子陷阱。

After pre-HE stress, the generated interface states can reduce the number of holes being injected into gate oxide generated by avalanche process during snapback stress, which causes the MOSFET snapback degradation to decrease in on-state and off-state modes. process. In the process of the E.

在预加热电子（HE）应力后，HE产生的界面陷阱在snapback应力期间可以屏蔽雪崩热空穴注入栅氧化层，使器件snapback开态和关态特性退化变小。

The drain characteristics in saturation region of the power vd-MOSFET

功率VD&MOSFET饱和区中的漏特性

Study on Solid State Modulator based on Power MOSFET Device

基于MOSFET的固体调制器研究

High Temperature Model and the Key Processes of SiC MOSFET

碳化硅MOSFET的高温模型及关键工艺研究

A new method of device simulation for MOSFET

一种MOSFET器件模拟的新方法

Design of Power MOSFET Driver Circuit for High Frequency Induction Heating Supply

高频感应加热电源功率器件MOSFET驱动电路

Analysis of Power MOSFET Resonant Gate Drive Technology in Power Electronics

电力电子功率MOSFET管谐振驱动技术的分析

New Method for Analysis of Surface Potential of MOSFET in Subthreshold Zone

一种新的MOS器件亚阈区表面势分析方法

Gate Charge Analysis and Structure Improvement of Power MOSFET

POWER MOSFET栅电荷分析及结构改进

Process Synthesis and Its Application to MOSFET's and Bipolar Devices

工艺综合及其在MOSFET和双极器件中的应用

Simplified Design Method for Power MOSFET Passive Driving Circuit

MOS无源驱动电路的简化设计方法

Study on Passive Snubber Circuit with Energy Recovery for Power MOSFET

功率MOSFET馈能式缓冲电路的研究

MOSFET Device Synthesis System Implemented in genetic Algorithm

应用遗传算法实现的MOS器件综合系统

Application of Power MOSFET Inverter in AC Servo System

功率MOSFET逆变器在交流伺服系统中的应用