MOSFET的例句大全

The thick film SOI MOSFET can be fully depleted under normal operating condition, if there is an anti doped silicon island near the back gate in the channel.

通过在厚膜SOI MOSFET靠近背栅的界面形成一个相反掺杂的硅岛，从而使得厚膜SOI MOSFET变成全耗尽器件。

A model for inversion channel electron mobility of GaN n-MOSFET's is proposed based on semiconductor device physics.

在器件物理的基础上，提出了一种半经验的GaN n-MOSFET反型沟道电子迁移率模型。

Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用。

As a practical junction termination techonology, field plate ( FP) has been widely used in power MOSFET, HVIC and SPIC with the merits of small occupied area, simple manufacturing process and so on.

场板技术作为一种实用的结终端技术，因其所占面积小、制造工艺简单等优点，在功率MOS器件、高压集成电路和智能功率集成电路中得到了广泛的应用。

Because of the capacitance bottom plate sampling and fully differential structure, the charge injection effect of switched-MOSFET and the clock feed-through effect induced signal error are eliminated. The linearity, signal to noise ratio ( SNR) and conversion-speed of the ADC are improved.

由于采用了电容下极板采样和全差分结构，能够有效地消除开关管的电荷注入效应和时钟馈通效应引起的采样信号的误差，提高模数转换器的线型度、信噪比和转换速度。

Control the big MOSFET's substrate always equal to the higher end voltage between the source and drain to prevent pn forwardly bias.

控制开关功率MOS管的衬底始终等于源漏中较高一端的电压，防止pn结正偏带来的衬底电流。

The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.

二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；

Compared with various power devices, power MOSFET were employed as the switches of two inverters.

分析对比了各种常用电力电子器件，选择了功率MOSFET作为一次逆变和二次逆变开关元件。

Power electronics' initial product is rectifier, thyristor, power MOSFET, power GTR and other products. However, these products all have their own shortcomings.

电力电子器件最初的产品是整流管、晶闸管、功率MOSFET、大功率GTR等产品、但是这些产品都有着自身的缺点。

This paper brings forward a new method of substituting power MOSFET whose switch time is shorter for thyristor in developing the pulsed fast discharge power supply of sulfur dimmer.

在研制硫双原子分子激光器脉冲电源时，采用了开通速度更快的功率MOSFET替代了快速晶闸管。

The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

N-channel enhancement-mode MOSFET with fast intrinsic diode was used to control the valve.

驱动电路采用具有高速开关特性和高可靠性的N沟道增强型功率器件，可以满足执行机构可靠控制要求。

Design of MOSFET Driver Used in the Stepping-motor Driver

步进电机驱动器中MOSFET的驱动设计

A Voice Band MOSFET C Continuous Time Lowpass Filter

音频低通MOSFET-C连续时间滤波器设计

The technology of synchronous rectification is to replace rectifying diode with power MOSFET which has low turn-on resistance, so it can decrease the dissipation of rectifier circuit greatly, improve the efficiency of DC/ DC converter and meet the needs of low-voltage and large current rectifier.

同步整流技术采用通态电阻极低的电力MOSFET来取代整流二极管，能大大降低整流电路的损耗，提高DC/DC变换器的效率，满足低压、大电流整流器的需要。

The device consists of pulse control circuit, optical coupling isolation, MOSFET driver, waveform control unit, pulse voltage regulator modules, those are implemented based on CPLD and MOSFET.

以CPLD、MOSFET等为主要芯片设计了脉冲控制电路、光耦隔离和MOSFET驱动电路、波形调节单元、脉冲电压调节单元等，获得了符合加工要求的输出脉冲波形。

Then the factors of accuracy and the requirements of the emission module are analyzed. A specific laser diode with integrated MOSFET and capacitor and a dedicated driver chip are used in the system to output high-quality laser pulse as the ranging signal.

文章首先分析了激光脉冲发射系统对测距精度的影响因素和对发射模块的要求后，系统采用专用集成MOSFET和电容的激光二极管和专用的驱动芯片产生高质量的激光脉冲作为测距信号。

Quantum modeling for nanoscale double gate MOSFETs based on Green's function

纳米双栅MOSFETs的量子格林函数模拟

The Research Progress of High Dielectric Constant Tantalum Oxide Films as MOSFET-gate

五氧化二钽高K薄膜作为MOSFET绝缘栅研究