MOSFET的例句大全

Two-Dimensional Short Channel Mosfet Steady State and Substrate Current Simulation

二维短沟道MOSFET直流稳态与衬底电流的数值模拟

Simulation on Structure and Performance of Grooved-Gate N MOSFET

槽栅n MOSFET结构与性能仿真

Study on High Speed Dual MOSFET Driver and Its Application to Switch Mode Power Supplies

高速双MOSFET驱动器及在开关电源中应用

MOSFET High Frequency Exciting ( Continue/ Pulse) CO_2 Laser Power Supply

MOSFET式高频激励（连续／脉冲）CO2激光电源

In addition, by analyzing the inside structure of MOSFET, three methods to quicken the pulse front edge are presented.

另外本文通过分析MOSFET的内部结构，从MOSFET驱动原理上寻求了几种加快输出脉冲前沿的方法。

These R-MOSFET-C filters, implemented in a standard CMOS process, utilize the linearized model behavior of anMOS transistor operating in the triode region instead of a passive resistor.

这些滤波器用标准的CMOS工艺实现，利用工作在线性区的MOS管来替代无源电阻。

In order to reduce the loss of the main switching power supply, improve the efficiency of main power supply, the power uses MOSFET Phase-shifted Full-bridge Zero-voltage and Zero-current Soft Switching Technique, by simulating application of Full-bridge Zero-voltage Soft Switch, verify the rationality of design.

为减小主开关电源的损耗，提高主电源的效率，对电源采用了MOSFET的移相全桥零电压软开关技术，并对全桥零电压软开关的应用做了仿真，验证了设计的合理性。

The proposed SPICE model is useful as a computer-aided design tool for analysis and design of circuits of power MOSFET' s.

该等效电路模型能够应用于电力电子电路的CAD设计之中，满足工程应用的需要。

From the property of MOSFET, this paper presents the mechanism of pH-ISFET in detail and according to the site bind theories of electrochemistry, the author developed a more general and user-friendly SPICE model for the ISFET device with the use of MOSFET device model in SPICE;

从MOSFET器件性能出发，本文详细地讨论了ISFET器件的敏感机理；并且，根据电化学的表面基模型理论，借助SPICE内部的MOSFET器件模型提出了一种适于ISFET器件的简洁通用的行为描述。

VMOSFET Low Voltage Drive Power Supply for Stepping Motor

用于电机的VMOSFET低压驱动电源

Temperature Effects on Break-Down Voltage, on-State Resistance& Merit Figure of Power VMOSFET

功率VMOSFET击穿电压和导通电阻的温度效应

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

Analytical Model of Subthreshold Current for Short Channel MOSFET

短沟道MOSFET亚阈值电流的解析模型

Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET

利用MOSFET亚阈I-V特性进行辐射感生界面陷阱的测量

Quantum mechanical effects on deep submicron MOSFET subthreshold characteristics

量子化效应对深亚微米MOSFET亚阈区特性的影响

Regular Perturbation Method for Studying the Subthreshold Characteristics of Nano-Scaled MOSFETs

摄动法研究纳米MOSFETs亚阈值特性

This article studies the measurement of radiation induced interface traps using the subthreshold I V characteristic of MOSFET.

本文利用MOSFET亚阈IV曲线对加固和非加固MOSFET的辐射感生界面陷阱密度进行了测量。

MOSFET's are made by using p well and twin well process, and As and BF 2 implanted poly Si gate, respectively.

并分别用P阱和双阱工艺、多晶硅栅注砷和注BF2制作了电路样品。

A new CO_2 laser switch power supply utilizing two MOSFET forward driving technology is developed successfully.

采用双管正激式开关电源技术，成功研制了一种新型的CO2气体激光器电源。

this paper demonstrates a novel battery constant current discharging device. the device discards traditional resistance discharging idea and it takes the power mosfet as main power converter. it improves battery discharging efficiency and reduces volume, weight and price.

介绍了一种新颖的蓄电池恒流放电装置，该放电装置摒弃了传统电阻放电思想，采用功率MOSFET作为主要的能量转化器件，提高了蓄电池放电效率，减小了放电装置的体积、重量和成本。