mocvd的例句大全

The effects of the thickness of high temperature buffer layer, the growth rate of epitaxial layer and the rich Zn environment on the properties of ZnO films grown by AP-MOCVD were investigated.

研究了高温缓冲层厚度、外延层的生长速率以及富Zn环境对ZnO薄膜生长的影响，优化了生长工艺参数。

ZnO thin films were grown on Cu/ Si ( 111) template by atmospheric pressure MOCVD. The effect of the growth temperature of buffer layer on the properties of ZnO films was studied.

采用常压MOCVD方法在Cu/Si（111）基板上生长ZnO薄膜，研究了缓冲层的生长温度对ZnO外延膜性能的影响。

This article mainly studies the temperature control system of MOCVD.

本文主要研究MOCVD设备的温度控制。

Based on MOCVD Temperature Control System Structure Research

基于MOCVD温度控制系统结构研究

Thermodynamic Analysis of MOCVD Epitaxy Process Design for Ga In As Sb Alloy Semiconductor

Ga-In-As-Sb合金半导体MOCVD外延工艺设计的热力学分析

MOCVD Growth of Antimonide Semiconductors and Simulation of Antimonide-based Thermophotovoltaic Devices

锑化物半导体材料的MOCVD生长研究及其热光伏器件的模拟分析

The influence of the thickness deviation on the reflection spectrum of semiconductor materials DBR was analyzed using the transfer matrix method. By the influence, a determining method of the thickness of the DBR grown by MOCVD was presented.

应用传输矩阵方法分析了厚度偏差对半导体布拉格反射镜（DBR）反射谱的影响，并利用这种影响提出了一种金属有机化合物汽相淀积（MOCVD）制备布拉格反射镜精确确定外延厚度的方法。

This paper presents a new fuzzy predictive control method for the MOCVD device control system set to handle the non-linearity, time variability and large delay of plant controls.

为解决金属有机化合物化学气相淀积（MOCVD）设备温度控制的非线性、时变性以及大滞后等问题，给出了一种用模糊控制和预测控制相结合的复合控制方法。

The temperature field uniformity of the reaction chamber, as the core component of MOCVD, directly influences the quality and properties of materials.

反应室作为MOCVD设备的核心部件，其温度场的均匀性直接影响到生长材料的质量。

This article firstly introduces the composition of MOCVD, and makes a brief description for each part, mainly the structure of the reaction chamber.

本文首先从MOCVD设备的结构入手，介绍了MOCVD系统的组成，并对各个组成部分功能做了简要描述，重点介绍了反应腔的结构。

Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD

MOCVD生长GaN的反应动力学分析与数值模拟

Iron oxide-mica pearlescent pigment was prepared from Fe ( CO) 5 in a spout fluidized reactor using metal organic chemistry vapour deposition ( MOCVD) technique.

以Fe（CO）5为物源，在常压喷动流化反应器中，以金属有机化学气相沉积（MOCVD）法对云母粉进行包覆，制备铁系-云母珠光颜料。

InP Based Long Wavelength Transmitter OEIC Structure Grown by MOCVD

InP基长波长光发射OEIC材料的MOCVD生长

A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

The Growth of ZnO Films by Metel-organic Chemical Vapor Deposition ( MOCVD) and the Fabrication and Study of ZnO UV Detector

MOCVD法ZnO薄膜生长及其紫外探测器的制备与初步研究

Using the GaN epilayer which was grown on Si ( 111) by MOCVD to fabricate GaN ultraviolet detectors is reported in this paper.

采用MOCVD技术在Si（111）衬底上生长GaN薄膜，以此材料制备成光导型Si基GaN紫外探测器。

Performance Comparison of GaAs/ AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

MOCVD Long Range Monitor and Control System Design

MOCVD远程监控系统设计

Curve Analysis of Real-time Interference in GaN Film Growth by MOCVD

MOCVD生长GaN薄膜的实时干涉曲线分析

Optimum Structural Design for QW Laser Material and Grown by MOCVD

MOCVD生长量子阱激光器材料及结构的优化设计