mocvd的例句大全

Secondly, model for the vertical MOCVD reactor of XiDian University was set up. On the foundation of the model, the flow field, temperature field and growth rate velocity distribution can be simulated.

依照西安电子科技大学立式MOCVD原型建立立式反应室模型，并模拟了反应室中流场、温度场分布和生长速率分布。

Design of MOCVD control system on GaN growth

GaN系半导体材料生长的MOCVD控制系统设计与实现

MOCVD Growth of Carbon Doped GaAs/ AlGaAs High Power Semiconductor Lasers

MOCVD生长碳掺杂GaAs/AlGaAs大功率半导体激光器

Therefore ALE is also called "digital epitaxy". In comparison with conventional MBE and MOCVD, ALE offers advantages of greater thickness uniformity, fewer surface defects, less edge growth in selective epitaxy and monolayer control in sidewall epitaxy.

与传统的MBE和MOCVD相比，ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。

Monocrystalline ZnO films with mosaic structure are successfully grown on Si ( 111) substrate by atmospheric-pressure metal-organic chemical vapor deposition ( MOCVD).

用常压金属化学气相沉积法（MOCVD）在Si（111）衬底上制备了马赛克结构ZnO单晶薄膜。

Continuous preparation of YBCO superconducting tape on Ag substrate by MOCVD

在Ag基体上用MOCVD法连续制备YBCO超导带

Continuous preparation of YBCO superconducting tape on a ag/ ni composited substate by dynamic MOCVD

动态MOCVD法在Ag／Ni复合基体上连续制备YBCO超导带

at last, we simulate benard convection within the mocvd reactor. it is found that the critical ra number is larger than predicted by current theory.

文章最后还模拟了MOCVD反应器内的Benard对流，发现发生Benard对流的临界Ra数大于理论预期值，其原因可能是由于模拟条件并非纯自然对流，反应腔内强迫对流依然发挥一定作用的缘故。

This article mainly describes the preparation of ZnO thin films with highly orientation using RF reactive ion plating, RF reactive sputtering, MOCVD, and laser-assist evaporation, etc.

本文主要叙述采用RF反应离子镀、RF反应溅射、MOCVD和激光辅助蒸发等方法制备高度取向的ZnO薄膜。

The parameters of thermodynamic equilibrium are calculated during the process of GaN growth by MOCVD using NH 3 as N source and TMG as Ga source.

计算了以NH3为氮源，以TMG为镓源，MOCVD生长GaN过程中各种热力学平衡参数。

the structural properties of mg doped gan films with different mg concentrations deposited by mocvd have been measured by tem with high resolution reflective electron diffraction, sem and x ray diffraction.

采用透射电镜高分辨反射电子衍射、扫描电镜形貌观察、X射线衍射等不同方法测试了不同Mg含量的N型氮化镓薄膜的结构。

the sample used in this study was grown by mocvd method on < 100> oriented gaas substrates.

所用的样品用MOCVD方法生长在晶向的GaAs衬底上。

quantum well design using transmission matrix method and grown by mocvd

应变量子阱传输矩阵法设计及MOCVD外延制备

Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.

介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.

The membrane formed inside the porous of support by MOCVD process is resistant to hydrogen embrittlement.

由金属有机气相沈积法(MOCVD)在载体孔内沈积钯膜有助于防止氢的脆化作用.

A brief introduction to CBE comparing with MBE and MOCVD is presented in this paper.

本文主要通过与MBE和MOCVD的对比,对CBE作了简单的介绍.

Metal Organic Chemical Vapor Deposition ( MOCVD ) is a key technology in growing thin-films.

金属有机化学气相沉积 ( OCVD ) 一门制备薄膜材料的关键技术.

The Ohmic contact and photoresponse of a ZnO single crystal film produced by MOCVD are investigated. The electrical and photoresponsive changes in the ZnO film due to the RF sputter deposition of SiO_2 ( antireflective coating) are also discussed.

对采用MOCVD方法沉积的ZnO单晶薄膜的欧姆接触特性、光电特性进行了研究，并对比研究了射频溅射沉积SiO2抗反射膜对ZnO薄膜I-V、光电特性的影响。

MOCVD Grown Quantum Well Laser Materials with MQB

MOCVD生长带有MQB的量子阱激光器材料