p-n的例句大全

By using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of reverse biased p-n junctions.

采用二维有限元数值分析的方法，开发了用于反向偏置p－n结分析的模拟软件，可以模拟与MOS型功率器件反向耐压有关的终端浅结场环、场板、SiO2介质及界面态。

In summary, the match flame-retarded elements on thermal properties and component which contain in novel single molecule intumescent flame retardant ( P-N IFR) result excellent flame-retarded effect.

可以说正是由于新型的单分子膨胀型阻燃剂P-N IFR中各阻燃要素间的良好的热性能匹配和组分匹配，才使得该无卤膨胀阻燃剂取得出色的阻燃效果。

Electric Field Effect on the Thermal Emission Rate of Holes Trapped at Gold Donor Center in Si P-N Junction

硅P-N结电场对金施主中心空穴热发射率的影响

Realization of fuzzy logic controller for THERMAUTOSTAT with semiconductor p-n junction cooler by bidirectional regulating

半导体致冷堆双向调节恒温模糊逻辑控制器的实现

It is found that asymmetry doping at the ribbon edge causes the the spin polarization effect, leading to the current split of two spins, and that under the AF state the heterojunction with symmetry doping shows the one direction conductivity and P-N junction effect.

研究发现，边缘的不对称性掺杂引起了自旋极化效应，使自旋电流发生分裂；而对称性掺杂的异质结在反铁磁构型下出现了明显的单向导电性，显示出P-N结效应。

The abnormal decay in nonsteady state of p-n junction in the forward direction

p-n结正向不稳态的异常衰减

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

Study on the response of p-n junction for Hight power microwave illumination

高功率微波激励下p-n结器件响应

optical resonator of p-n junction laser

P-N结型激光器谐振腔光学跟踪系统

Preparation p-n junction by phosphorus pentoxide sublimation, the most influence on square resistance is reaction time followed by flow and silicon reaction temperature, the least is phosphorus oxychloride diffusion.

五氧化二磷升华制备p-n结，对方块电阻影响最大的是反应时间，其次是气流量和硅片反应温度，P2O5升华温度影响较小。

In the uniformity comparison of preparation p-n junction by phosphorus oxychloride diffusion and by phosphorus pentoxide sublimation, it is more uniformity that p-n junction preparation by phosphorus pentoxide sublimation.

三氯氧磷扩散与五氧化二磷升华制备p-n结的均匀性比较中，用五氧化二磷升华制备出的p-n结要更加均匀。

Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device

通过倾斜多晶硅p-n结光电器件提高光电转换性能

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology.

采用工业标准06μM CMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。

Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes

7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究

Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

碲镉汞pn结中少数载流子寿命的测量

Some results of the application of if integrated circuits of p-n junction isolation for radiotelescope receiver

射电望远镜接收机使用PN结隔离中频组件的一些结果

rare-earth alloy manganite p-n junctions

钙钛矿稀土合金锰氧化物p-n异质结

the restricted rotation about p-n bond at room temperature was observed and discussed.

本文观察和讨论了在室温下P—N键的旋转阻滞。

monitoring the quality of silicon solar cell by p-n junctions characteristics

用PN结特性监控硅光电池质量

Studies of the adductive property of metallic porphyrin co(ⅱ) [ p-n ( ch_3)_3] tppi with CO

金属卟啉Co（Ⅱ）[p-N（CH3）3]TPPI与CO加合性质的研究