p-n

C _ p and M _ n were obtained by kinetie extrapolation and GPC, respectively.

C_p用动力学外推法求取, 分子量用凝胶渗透色谱法测定.

Study on the response of p-n junction for Hight power microwave illumination

高功率微波激励下p-n结器件响应

Studies of the adductive property of metallic porphyrin co(ⅱ) [ p-n ( ch_3)_3] tppi with CO

金属卟啉Co（Ⅱ）[p-N（CH3）3]TPPI与CO加合性质的研究

Amour p é n è tre dans l'homme par les yeux et dans la femme par les oreilles.

中文相对应的表达是:男人是视觉动物,女人是听觉动物.

Characteristics of a Front-Illuminated Visible-Blind UV Photodetector Based on GaN p-i-n Photodiodes with High Quantum Efficiency

高量子效率前照式GaN基p-i-n结构紫外探测器

CMOS Compatible MEMS P/ N Polycrystalline Silicon Thermopile IR Detector

CMOS兼容的微机械P/N多晶硅热电堆红外探测器

Both transistors are not of the n. p. n type.

两个晶体管不都是n. p. n型的.

Dark Current Characteristics Analyses of HgCdTe Photovoltaic Detectors with Vertical p-n Junction

垂直p-n结的碲镉汞光伏探测器暗电流特性分析

This study demonstrated that newly-adapted vegetable plot for radish with potassium based on N and P fertilization significantly enhanced its yield and quality.

新改菜地施钾研究表明：在施用氮、磷肥的基础上增施钾肥可显著提高水萝卜的产量；

Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

碲镉汞pn结中少数载流子寿命的测量

By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.

而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。

The abnormal decay in nonsteady state of p-n junction in the forward direction

p-n结正向不稳态的异常衰减

Electric Field Effect on the Thermal Emission Rate of Holes Trapped at Gold Donor Center in Si P-N Junction

硅P-N结电场对金施主中心空穴热发射率的影响

Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device

通过倾斜多晶硅p-n结光电器件提高光电转换性能

The treatment parameters in municipal wastewater plant include COD, BOD 5, SS, N and P etc.

目前,城市污水处理厂的处理对象包括COD 、 BOD5 、 SS和氮、磷营养物质.

Fabrication and Characterization of Backside-illuminated GaN/ AlGaN p-i-n Ultraviolet Detector

背照式GaN/AlGaN p-i-n紫外探测器的制备与性能

A reverse bias silicon p-n junction based on light emitting diode is designed in standard 0.6 μ m industrial CMOS technology.

采用工业标准06μM CMOS工艺设计了以反向击穿硅pn结为基础的光发射器件。

The limiting nutrient, P. rose, most rapidly, which caused the ratio of N : P to decrease.

30多年来湖体中形态营养元素含量有较大增长, 尤其是磷增长最快, 使 氮磷 比下降.

Design and Research of 7-10 GHz p-n junction GaAs IMPATT Diodes

7-10千兆赫pn结砷化镓功率雪崩管的设计和性能研究

And in inflammatory group, the expression of N BSI-B 4 also showed that: 3~ ( rd ) day group > 7~ ( th ) day group ( P < 0.05 ).

且炎性痛组大鼠BSI -B4 表达还表现为3d组>7d组 ( P<0.05 ).

It is found that asymmetry doping at the ribbon edge causes the the spin polarization effect, leading to the current split of two spins, and that under the AF state the heterojunction with symmetry doping shows the one direction conductivity and P-N junction effect.

研究发现，边缘的不对称性掺杂引起了自旋极化效应，使自旋电流发生分裂；而对称性掺杂的异质结在反铁磁构型下出现了明显的单向导电性，显示出P-N结效应。

Preparation p-n junction by phosphorus pentoxide sublimation, the most influence on square resistance is reaction time followed by flow and silicon reaction temperature, the least is phosphorus oxychloride diffusion.

五氧化二磷升华制备p-n结，对方块电阻影响最大的是反应时间，其次是气流量和硅片反应温度，P2O5升华温度影响较小。

In summary, the match flame-retarded elements on thermal properties and component which contain in novel single molecule intumescent flame retardant ( P-N IFR) result excellent flame-retarded effect.

可以说正是由于新型的单分子膨胀型阻燃剂P-N IFR中各阻燃要素间的良好的热性能匹配和组分匹配，才使得该无卤膨胀阻燃剂取得出色的阻燃效果。

Realization of fuzzy logic controller for THERMAUTOSTAT with semiconductor p-n junction cooler by bidirectional regulating

半导体致冷堆双向调节恒温模糊逻辑控制器的实现

In the uniformity comparison of preparation p-n junction by phosphorus oxychloride diffusion and by phosphorus pentoxide sublimation, it is more uniformity that p-n junction preparation by phosphorus pentoxide sublimation.

三氯氧磷扩散与五氧化二磷升华制备p-n结的均匀性比较中，用五氧化二磷升华制备出的p-n结要更加均匀。

By using two-dimensional finite-element numerical analysis, we develop a computer simulation program used for terminal field calculation of reverse biased p-n junctions.

采用二维有限元数值分析的方法，开发了用于反向偏置p－n结分析的模拟软件，可以模拟与MOS型功率器件反向耐压有关的终端浅结场环、场板、SiO2介质及界面态。

GaN-based p-i-n Ultraviolet Detectors

GaN基p-i-n紫外探测器

Such packing be approved by the Insurance company for w . p . a . and t . p . n . d.

保险公司已同意为这种包装投保水渍险和偷窃、提货不着险.

Some results of the application of if integrated circuits of p-n junction isolation for radiotelescope receiver

射电望远镜接收机使用PN结隔离中频组件的一些结果