plasma sputtering的例句大全

Magnetically controlled cathod plasma sputtering technique was used to manufacture the plating manganin film.

用磁控溅射低温沉积镀膜技术制做锰铜薄膜,能够保持薄膜中锰、铜、镍成份的相对稳定和锰铜合金正六面三元固溶体金相结构的特性.

Through analysis we review methods fabricating thin film cathode, including chemical acetate base solution technique, sol-gel method, laser ablation, plasma enhanced chemical vapor deposition, pulsed laser deposition, radio frequency magnetron sputtering deposition, and electrostatic spray deposition.

评论了近年来制备薄膜阴极的方法，包括化学酸基溶解法、溶胶-凝胶法、激光焙烧法、增强型等离子体化学气相淀积法、脉冲激光法、电子束喷射沉积法和射频磁控溅射法。

An argon ion source used for sputtering deposition has been successfully developed based on the construction of hollow cathode connecting hollow anode and the technologies of thermal cathode electron emission arc discharge, plasma magnetic confinement and ion extracting on a curving surface.

本文采用空心阴极空心阳极结构，用热阴极电子发射弧放电驱动并用磁场约束产生等离子体，用曲面发射引出离子束，研制成了氩气放电溅射离子源；

The application and features of vaccum strip coating processes such a thermal jet evaporation, magnetron sputtering, electron-beam evaporation and plasma enhanced EB evaporation process were reviewed.

介绍了新一代连续带钢镀膜技术-真空镀膜的工艺特点及应用现状。

Study of SnO_2 Thin Film Gas Sensors from Plasma Reactive Sputtering

等离子体反应溅射生成SnO2气体传感器薄膜的研究

Plasma Emission Monitoring and TiO_2 Films Growth by Mid-Frequency Dual Magnetron Reactive Sputtering

等离子体发射监控系统参与的中频孪生反应磁控溅射沉积TiO2薄膜的实验研究

Update the processing methods to make SOFC from solid electrolytical film are by chemical vapour deposition, electrophoretic deposition, flow stretching, sputtering, plasma sputter coating, etc.

目前，SOFC用固体电解质薄膜制备方法有电化学气相沉积法、化学气相沉积法、电泳沉积法、溅射法、等离子喷涂法等。

Plasma emission spectra of ZnO and ZAO thin film grown by RF magnetron sputtering the emitting positions of the sputtered atoms are close to the corresponding incident ions ( in the order of angstrom);

ZnO和ZAO薄膜磁控溅射等离子体发射光谱溅射原子的出射位置就在离子入射位置的附近（埃数量级）；

The Effect of Process Parameters on Plasma Environment of RF Magnetron Sputtering PTFE Target With Negative Pulse-Voltage Bias

工艺参数对射频磁控溅射PTFE靶形成的等离子体组成的影响

Tungsten ( W) is presently a so good candidate plasma facing material for nuclear fusion reactor because of its high melting point, high thermal conductivity, low sputtering yield and low tritium retention capability.

钨具有高熔点、高导热、低溅射产额和低氚滞留性能，是核聚变堆最有希望的面对等离子体第一壁材料。

At present, W and W alloy are considered as a promising candidate for plasma facing material ( PFM) of International Thermonuclear Experimental Reactor ( ITER) because of their high thermal conductivity, high melting and low sputtering erosion.

目前，钨和钨合金由于良好的热传导性，高熔点，低溅射率等优良特性被普遍认为是最有希望成为国际热核聚变实验堆（ITER）等离子体面壁材料的候选材料之一。

Growth of TiN by Plasma Glow Discharge Sputtering, Diffusion and Ion Surface Alloying

等离子体辉光溅射反应复合渗镀合成TiN的研究

Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.

采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射PTFE靶等离子体气氛的影响规律。