power semiconductor device的例句大全

Research of FLR of Power Semiconductor Device

功率半导体器件的场限环研究

RSD ( Reserve Switching Dynistor), a new high-power semiconductor device, is a preferred candidate for the switch applied in the pulsed-power apparatus. However, some problems, which confirm to the generation of short-pulse based on RSD, are pressing to solve.

RSD（Reserve Switching Dynistor）是新型的高功率半导体器件，是脉冲功率装置的理想开关元件，但目前制约基于RSD开关窄脉冲发生的一些问题亟待解决。

SOI LDMOS device is a new type power semiconductor device which developed on the basis of LDMOS device.

SOI LDMOS器件是基于LDMOS器件的一种新型功率半导体器件。

The technology of DC-DC converter integrates several techniques including theory on the DC-DC converter, Integrated Circuit ( IC) design, power semiconductor device technology and so on.

DC-DC变换器技术结合了DC-DC变换器理论、集成电路设计和功率半导体器件技术等相关学科知识。

Breakdown voltage is one of the key properties for power semiconductor device.

击穿电压是功率半导体器件的重要参数之一。

Package and Electrostatic Discharge Failure Analysis of Power Semiconductor Device Chip

功率器件芯片封装和静电放电失效分析

Advantage and Development of Aluminium Implanted Power Semiconductor Device Products

铝注入的电力半导体器件产品的优势及其进一步开发

power semiconductor device chip manufacturing process is actually repeated several times on film formation, lithography and doping process in a substrate, and its primary task is to solve the problem of film formation.

功率半导体器件芯片制造过程中实际上就是在衬底上多次反复进行的薄膜形成、光刻与掺杂等加工过程，其首要的任务是解决薄膜制备问题。

thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.

晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。

High Technique Electric Power Semiconductor Device

高技术电力半导体器件

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

A Novel Power Semiconductor Device: RSD and its Applications

新颖的功率半导体器件RSD及其应用

With semiconductor device as the switch, an AC-DC converter can be used to change the AC power into DC power by turning the switch on and off.

交流-直流（AC-DC）电源转换器是一种利用半导体器件作为开关，通过控制开关管的关断与导通，将交流电能转换成直流电能的电路。

Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

Semiconductors-based solid state disk is a new kind of high-performance and low-power storage device, which uses Flash disk as its storage media. The birth of Flash storage will gradually replace traditional magnetic disk storage.

基于半导体的以Flash为存储介质的存储器是一种高性能、低能耗的新兴存储设备，它的问世将逐渐取代以磁记录方式存储数据的硬盘。

due to the excellent properties of chemical stability, high temperature resistance and corrosion resistance, gan semiconductor materials is suitable to the manufacturing of the device of optoelectronic ( blue, green and ultraviolet light, etc), anti-radiation, high-frequency and high-power.

氮化镓（GaN）半导体材料因其具有化学性质稳定、耐高温、抗腐蚀等优良特性，使其非常适合于制作光电（蓝光、绿光和紫外光等）、抗辐射、高频及大功率的电子器件。

Adopting full-controllable electric semiconductor device IGBT, a 160 kW/ 30 kHz parallel-resonance super-frequency induction heating power supply has been developed.

采用全控型电力半导体器件IGBT，研制了160kW/30kHz并联逆变式超音频感应加热电源。

semiconductor illumination is now the new industry the governments pay attention to, for which high power led is the key device.

半导体照明是目前国家重点扶持的新兴产业，大功率LED是半导体照明的关键器件。

a bipolar junction transistor relates to the technical field of a semiconductor power device.

双极结型晶体管，涉及半导体功率器件技术领域。

Since compound semiconductor has potentially numerous applications in high temperature, radiation hard, and high power IC device, the study of defects in compound semiconductors has been increasing using positron annihilation technique.

由于化合物半导体在制备高温、高频、大功率和抗辐射IC器件中极具潜力，因此人们越来越多的利用正电子湮灭技术对化合物半导体进行缺陷研究。