power semiconductor device

A Novel Power Semiconductor Device: RSD and its Applications

新颖的功率半导体器件RSD及其应用

The technology of DC-DC converter integrates several techniques including theory on the DC-DC converter, Integrated Circuit ( IC) design, power semiconductor device technology and so on.

DC-DC变换器技术结合了DC-DC变换器理论、集成电路设计和功率半导体器件技术等相关学科知识。

SOI LDMOS device is a new type power semiconductor device which developed on the basis of LDMOS device.

SOI LDMOS器件是基于LDMOS器件的一种新型功率半导体器件。

Package and Electrostatic Discharge Failure Analysis of Power Semiconductor Device Chip

功率器件芯片封装和静电放电失效分析

Since compound semiconductor has potentially numerous applications in high temperature, radiation hard, and high power IC device, the study of defects in compound semiconductors has been increasing using positron annihilation technique.

由于化合物半导体在制备高温、高频、大功率和抗辐射IC器件中极具潜力，因此人们越来越多的利用正电子湮灭技术对化合物半导体进行缺陷研究。

RSD ( Reserve Switching Dynistor), a new high-power semiconductor device, is a preferred candidate for the switch applied in the pulsed-power apparatus. However, some problems, which confirm to the generation of short-pulse based on RSD, are pressing to solve.

RSD（Reserve Switching Dynistor）是新型的高功率半导体器件，是脉冲功率装置的理想开关元件，但目前制约基于RSD开关窄脉冲发生的一些问题亟待解决。

Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

Research of FLR of Power Semiconductor Device

功率半导体器件的场限环研究

Advantage and Development of Aluminium Implanted Power Semiconductor Device Products

铝注入的电力半导体器件产品的优势及其进一步开发

Breakdown voltage is one of the key properties for power semiconductor device.

击穿电压是功率半导体器件的重要参数之一。

High Technique Electric Power Semiconductor Device

高技术电力半导体器件