sapphire substrate的例句大全

high purity gan films have been grown on sapphire substrate by movpe.

用MOVPE方法在蓝宝石衬底上生长了高纯氮化镓（GaN）外延材料。

A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

In order to release the stresses originated from the lattice mismatch and reduce the defect densities, sapphire substrate surfaces are preprocessed by H-plasma cleaning, N-plasma nitriding and the low temperature buffer growth.

为了释放因晶格失配产生的应力，以降低在GaN外延膜中引起的缺陷密度，我们对蓝宝石衬底采用了氢等离子体清洗、氮等离子体氮化以及低温生长缓冲层的方法。

instantaneous relaxation of photoconductivity in gan film grown on vicinal sapphire substrate by mbe

蓝宝石邻晶面衬底MBE生长GaN薄膜的瞬态光电导弛豫特性研究

analysis of influencing factors of sapphire substrate cmp removal rate

蓝宝石衬底材料CMP去除速率的影响因素

high-quality gan film was successfully deposited on ( 0001)-oriented sapphire substrate by low-pressure metal-organic chemical vapor deposition ( lpmocvd) process.

采用低压金属有机化学气相沉积（LPMOCVD）法，成功地在（0001）晶向的蓝宝石（Al2O3）衬底上制备了高质量的GaN薄膜。

the effects of sapphire substrate mis-cut angle on the properties of gan films

蓝宝石衬底的斜切角对GaN薄膜特性的影响

Transferring GaN Film from Sapphire to Cu Substrate by Laser Lift-off

激光剥离技术实现GaN薄膜从蓝宝石衬底移至Cu衬底