sapphire substrate

In order to release the stresses originated from the lattice mismatch and reduce the defect densities, sapphire substrate surfaces are preprocessed by H-plasma cleaning, N-plasma nitriding and the low temperature buffer growth.

为了释放因晶格失配产生的应力，以降低在GaN外延膜中引起的缺陷密度，我们对蓝宝石衬底采用了氢等离子体清洗、氮等离子体氮化以及低温生长缓冲层的方法。

A wet chemical etching method of n-GaN epitaxial layer grown on a sapphire substrate by MOCVD is investigated using UV of high pressure mercury lamp.

MOCVD用高压汞灯对n－GaN处延层进行了辐照湿法化学刻蚀研究，这种外延层是在A12O3衬底上用MOCVD方法生长的。

Transferring GaN Film from Sapphire to Cu Substrate by Laser Lift-off

激光剥离技术实现GaN薄膜从蓝宝石衬底移至Cu衬底