semiconductor material的例句大全

IC technology is microcircuit or system of introducing specific technology and is based on semiconductor material.

IC技术是指以半导体晶体材料为基础，采用专门工艺技术组成的微小型电路或系统。

It analyses and concludes the failure mechanism of pulsed laser acting on semiconductor material.

总结分析了脉冲激光作用于半导体的破坏机理。

Study on the Index System and Assessment Method of Industrial Eco-engineering in Emei Semiconductor Material Factory

峨嵋半导体材料厂企业生态工程评价指标体系及评价方法研究

The Effect of Annealing Temperature on the Formation of Environmental Semiconductor Material β-FeSi_2

热处理对环境半导体材料β-FeSi2形成的影响

Preparation and Modification of Semiconductor Material γ-Fe_2O_3 Ultra-Fine Powders

半导体材料γ-Fe2O3超细粉的制备与改性

Selenium ( Se), as an important semiconductor material, is also an essential element in life.

硒，作为很重要的半导体材料，也是生命组成的必要元素。

Study the Modulator Approaches of Work Function of Semiconductor Material with Nanostructure by Built-in Electric Field

内建电场对纳结构半导体材料功函数调制研究

ZnO is a kind of multifunctional semiconductor material with a broad band gap.

氧化锌（ZnO）是一种宽带隙多功能半导体材料。

The Si-based semiconductor material is one of the most important fundamental materials in electronic technology and information technology areas.

半导体硅基材料是电子技术、信息技术领域最为重要的基础材料之一。

as an intrinsic n-type semiconductor material, we can get a higher electron density, low resistivity, while in the visible region can maintain a high transmission rate, if we dope zno by donor ( such as al, ga, zr etc.).

作为一种本征n型的半导体材料，ZnO通过施主掺杂（如Al、Ga、Zr等），便可以获得较高的电子浓度，较低的电阻率，而在可见光区域仍能保持较高的透射率。

as a ⅲ-ⅴ group direct band-gap semiconductor material, gan has a wide band-gap ( 3.39ev) at room temperature.

氮化镓（GaN）作为Ⅲ-Ⅴ直接带隙半导体材料，室温下有着较宽的禁带宽度（3.39eV）。

Silicon, semiconductor material , can form different configurations at anodic bias etching system in the HF electrolyte.

半导体硅在含HF电解液阳极氧化体系中可以形成不同的腐蚀形态.

The surface in the p-type-type semiconductor material at which the donor and acceptor concentration are equal.

当半导体中加入了施主感受主杂质,我们就说该物质“掺杂”了.

Low Temperature Photoluminescence Study on Broad Forbidden Band Semiconductor Material as well as Nanometer Material

宽禁带半导体材料及纳米材料的低温光致发光研究

As a semiconductor material whose reserves is largest in the lithosphere, Silicon is widely used in microelectronics and other fields for excellent properties.

作为地壳中储量最大的半导体材料，硅材料具有良好的半导体特性，广泛应用于电子信息等领域。

The synthesis method of zinc sulfide microballoon belongs to the field of semiconductor material preparing technology.

本发明涉及一种硫化锌微球的合成方法,属于半导体材料制备技术领域.

Poly crystal silicon, as the important electrical and semiconductor material, is of strategic importance and economic benefits for the construction of Silicon Industry Base with Annual Output of thousand tons.

多晶硅是重要的电子与半导体原材料，建设千吨级硅产业基地具有重要的战略意义与经济效益。

ZnO, with a wide bandgap ( 3.37eV) at room temperature and larger exciton binding energy ( 60meV), is a II-VI compound semiconductor material, and has wide application prospects in optoelectronic devices such as short-wavelength laser diodes and ultraviolet photodetectors.

ZnO是Ⅱ-Ⅵ族宽带隙半导体材料，室温下禁带宽度约为3.37eV，激子束缚能约为60meV，在短波长激光二极管与紫外光探测器等光电器件领域具有非常广阔的应用前景。

cadmium oxide ( cdo) is a direct wide bandgap semiconductor material.

氧化隔是一种宽禁带直接带隙化合物半导体。

The smallest unit that supports electron flow in a semiconductor material; a hole in P-type silicon or a free electron in N-type silicon.

在半导体材料中维持电流的最小单元，在P型硅中是空穴，在N型硅中是自由电子。