semiconductor material的例句大全

Marketing Strategy Studying of Semiconductor Material Division, MM China

MM跨国公司半导体材料部中国市场营销战略研究

The numerical calculation on displacement damage of Si and GaAs semiconductor material irradiated by neutron

中子对Si及GaAs半导体材料位移损伤的数值计算

As a new type of wide bandgap semiconductor material, ZnO thin film is widely used.

ZnO薄膜作为一种新型宽带隙半导体材料，有其广泛应用。

Analyse the standard of SEMI semiconductor material

SEMI半导体材料标准的分析

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap, which has wurtzite structure too.

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

Zinc oxide nano material is a new type direct wide band gap semiconductor material, which has important applications in optical-electron devices.

纳米ZnO是一种新型的宽能带直接带隙多功能半导体材料。

ZnO is a semiconductor material with photo-voltage property.

ZnO薄膜具有光电转换特性，有望成为太阳能电池材料；

A Design of Constant Current Source System on Semiconductor Material Resistivity Measurement

一款半导体材料电阻率测量的恒流源系统设计

Study of the Characteristic and Parameters of Semiconductor Material

半导体材料特性和参数研究

research on automated material control system in semiconductor industry

半导体行业中物料自动控制的应用研究

GaN is a new wide band gap semiconductor laser material.

GaN是一种新型的宽禁带半导体兰色发光与激光材料。

With the rapid development of the solar PV industry and semiconductor industry, there is a larger and larger demand for silicon material.

特别是伴随着太阳能光伏产业和半导体信息产业的迅猛发展，对单晶硅材料的需求非常大。

a thermal treatment step is next performed so as to recrystallize the amorphized region of the defective semiconductor crystal material.

然后执行热处理步骤，以便使有缺陷的半导体晶体材料的非晶化区域再结晶。

ZnO is a direct wide band-gap compound semiconductor. Due to abundant material and low cost, ZnO is considered as a promising material instead of GaN for short-wavelength optoelectronic devices.

ZnO作为直接宽禁带化合物半导体，由于原料丰富、价格低，有望取代GaN应用于短波长光电器件。

when a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped" .

当半导体中加入了施主感受主杂质，我们就说该物质“掺杂”了。

finally, the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.

最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性.

Development and state of chinese semiconductor Si material

我国半导体硅材料的发展现状

An Easy Method for Judging the Type of Electric Conduction and the Concentration of Charge Carrier in Semiconductor Epitaxial Material

半导体外延材料导电类型及载流子浓度的简易判定法

Our company widely applies in stone material, ceramics, brake lining, metal, semiconductor and other material domains and so on cut and polished processing.

我公司产品广泛用于石材、陶瓷、刹车片、金属、半导体及其他材料的切磨加工等领域。

a 1.55 μ m polarization-insensitive semiconductor optical amplifier ( soa) was fabricated with the active region of ingaas tensile-strained bulk material.

研制了有源区为InGaAs张应变体材料的1.55μm偏振不灵敏半导体光放大器（SOA）。