threshold current的例句大全

The threshold current of stimulation, time to acquirement of endpoint, time to onset of motor block in cooperative children and effect of nerve block were compared among the groups.

比较各组在刺激域电流、获得终点时间、合作患儿运动阻滞起效时间及神经阻滞效果的差异。

At room temperature, the random lasing from ZnO with the threshold current 43 mA was obtained.

室温条件下在该结构中获得了阈值电流为43mA的ZnO随机激光输出。

We can monitor many parameters and characteristics by measuring TEN, such as surge frequency, spectrum width, threshold current, mode jump and stability of output light power.

通过对激光的电噪声的测量可以监测激光器的诸多参数和特性，如弛豫频率，谱线宽度，阈值电流，模式跳变及输出光功率是否稳定等。

The threshold current for switching to out-of plane precession state is the lowest when the magnetization directions of two pinned layers are antiparallel and perpendicular to the film plane.

当两钉扎层磁矩方向反平行排列并且都垂直膜面的时候，实现磁矩进动态所需的电流最小。

The minimum threshold current could be less than 1 mA when the facet reflectivity is 0.9.

端面反射率为0.9时，最小阈值电流可以小于lmA。

The lowest threshold current density of 2000A/ cm~ 2 and average normalized threshold current density of 5000A/ cm~ 2. μ m were obtained under pulsed operation at room temperature.

室温下的最低阈电流密度是2000A/cm~2.平均归一化阈电流密度是5000A/cm~2μm。

Threshold current and external quantum efficiency of quantum well lasers

量子阱激光器的阈值电流和外量子效率

Low threshold current and high quantum efficiency ridge waveguide lasers

低阈值电流、高量子效率脊形波导激光器

The relation of device parameter on threshold current and optimal well numbers have been discussed.

讨论了阈值电流密度、最佳阱数等与器件参数（阱数、腔长和反射率等）之间的依赖关系。

Stripe Semiconductor Lasers with Low& Threshold Current and Fundamental Transverse Mode

低阈值基横模条形半导体激光器

Accurate measurement of threshold current for semiconductor lasers

半导体激光器阈值电流的精确测量

GaAs/ GaAlAs Vertical Cavity Surface Emitting Lasers with Low Threshold Current

GaAs／GaAlAs低阈值垂直腔面发射激光器

Low Threshold Current InGaAs-GaAs Strained Layer Quantum Well Laser

低阈值InGaAs-GaAs应变层多量子阱激光器

Through numerical calculation and analysis, the effects of structure parameters on far field pattern and threshold current density are studied.

通过数值计算分析，详细研究了结构参数对远场及阈值电流密度等的影响。

Low Threshold Current Density InGaAs/ GaAs/ AlGaAs Strained Quantum Well Lasers

低阈值电流密度INGaAs/GaAs/AlGaAs应变量子阱激光器

And double oxide-confining regions offer a method of decreasing threshold current and controlling high order modes.

同时双氧化限制层为VCSEL器件提供了一种降低阈值，抑制高阶横模的方法。

Consequence of Current Spreading Effect on Threshold Current of Oxide Stripe-Geometry DH Lasers

电流扩展效应对氧化物条形激光器阈值的影响

Based on the model, the laser characteristics such as the threshold current, mode suppression ratio etc. have been specified.

利用该模型对光纤光栅外腔半导体激光器的阈值电流、模式抑制比等进行了研究，得到了一些新的结论，并对此结论作出了合理的解释。

Low Threshold Current High Output Power Fundamental Transverse Mode 1.3 μ m InGaAsP/ InP BH Laser

1.3微米低阈值大功率基横模BH InGaAsP/InP激光器

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers'

GaAs基长波长量子点激光器增益和阈值电流密度的理论分析（英文）