threshold current的例句大全

The minimum threshold current could be less than 1 mA when the facet reflectivity is 0.9.

端面反射率为0.9时，最小阈值电流可以小于lmA。

At room temperature, the random lasing from ZnO with the threshold current 43 mA was obtained.

室温条件下在该结构中获得了阈值电流为43mA的ZnO随机激光输出。

In order to give a low threshold current density, the curvature radius should be more about 150 μ m.

为了保持较低的阈值电流，本文建议曲率半径选择在15μm左右。

The linear dependences of the threshold current and the maximum current on DC clearing ion voltage are also presented.

提出了适于此类清洗电极的直流清除离子电压与积累束流阈值流强、最高流强的线性关系。

When the relative humidity of gas at the inlet is increase, the threshold current density is linearly decreased;

临界电流随阴极气体进口相对湿度的增加而线性下降；

The effect of current spreading in the cap layer of carbon doped GaAs laser on its threshold current was studied.

实验研究了碳掺杂GaAs激光器帽层的侧向扩展电流对阈值的影响。

The wavelength dependence of threshold current is studied experimentally, and the obtained experimental results coincide with the theoretical analyses well.

并从理论和实验上研究了阈值电流与波长之间的依赖关系。

InGaAsP/ InP Buried Crescent Laser Emitting at 1.3 μ m with Low Threshold Current

1.3微米低阈值掩埋新月型InP-InGaAsP激光器

Influence of Mass-Transported Layers on Threshold Current and Mode Behavior in InGaAsP BH Semiconductor Lasers

质量迁移层对InGaAsP BH半导体激光器阈值电流和模式行为的影响

Fabrication of Low Threshold Current Constricted Double-Heterojunction Lasers

低阈值压缩双异质结构激光器的制造

Its wavelength ranges from 815 to 825 nm, threshold current is 130 mA at room temperature under CW operation.

该激光器的峰值波长为815～825nm，阈值电流为130mA。

The mode and the threshold current characteristics of planar stripe geometry DH lasers can be analyzed by two-dimensional waveguide model.

平面条形双异质结激光器的模式和阈值电流特性可以用两维波导模型来分析。

The system is mainly used for test the threshold current, differential efficiency, V-I characteristic and P-I characteristic of LD module.

该系统主要面向组装后的激光二极管组件，对其进行电流阈值（Ith）、光电特性（P-I）、电抗特性（V-I）等主要特性的测试。

Measurements are made on the temperature dependence of threshold current density in DC-PBH 1.3 μ m InGaAsP/ InP laser under direct current.

测量了1.3μm InGaAsp/InP DC-PBH激光器在直流工作条件下，阀值电流密度随温度的变化。

In particular, there is an optimal well number corresponding to the lowest threshold current density for MQW structure in the microcavity lasers.

特别是在微腔多量子阱结构中存在一个最佳阱数对应着阈值电流密度的最小值。

Further analysis shows that it is caused by the enhancement of the threshold current density and threshold carrier density in terms of optical-gain spe.

进一步分析认为，这是因为条宽变窄导致器件阈值电流密度、阈值载流子密度变大造成的。

The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed.

得出了较宽温度范围内阈值电流密度的变化，包括负温度及振荡温度效应。

The analysis of one particular structure has shown that a relatively low threshold current density of 832 A/ cm~ 2 can provide a threshold optical gain of 50/ cm at room temperature.

理论分析显示，用一个相对较低的阈值电流密度（832A/cm2）就能在室温下产生50/cm的阈值光学增益。

We have numerically analyzed the single-model operation condition of the half-ring cavity laser and influence of the half-ring cavity structure on bending loss and threshold current density has been obtained.

数值分析了半环形激光器的单模工作条件，同时模拟分析了半环形结构对弯曲损耗及阈值电流密度的影响。

The results show that current spreading is one of the main influential fac-tors on the thermos-field distribution characteristics, and the effective method of decreasing tem-perature is to reduce the threshold current density.

计算结果表明，电流扩展是影响这种激光器热场特性的主要因素，降低阈值电流是减小温升的有效方法。