MOSFET的例句大全

Study on High Speed Dual MOSFET Driver and Its Application to Switch Mode Power Supplies

高速双MOSFET驱动器及在开关电源中应用

MOSFET High Frequency Exciting ( Continue/ Pulse) CO_2 Laser Power Supply

MOSFET式高频激励（连续／脉冲）CO2激光电源

In addition, by analyzing the inside structure of MOSFET, three methods to quicken the pulse front edge are presented.

另外本文通过分析MOSFET的内部结构，从MOSFET驱动原理上寻求了几种加快输出脉冲前沿的方法。

These R-MOSFET-C filters, implemented in a standard CMOS process, utilize the linearized model behavior of anMOS transistor operating in the triode region instead of a passive resistor.

这些滤波器用标准的CMOS工艺实现，利用工作在线性区的MOS管来替代无源电阻。

In order to reduce the loss of the main switching power supply, improve the efficiency of main power supply, the power uses MOSFET Phase-shifted Full-bridge Zero-voltage and Zero-current Soft Switching Technique, by simulating application of Full-bridge Zero-voltage Soft Switch, verify the rationality of design.

为减小主开关电源的损耗，提高主电源的效率，对电源采用了MOSFET的移相全桥零电压软开关技术，并对全桥零电压软开关的应用做了仿真，验证了设计的合理性。

The proposed SPICE model is useful as a computer-aided design tool for analysis and design of circuits of power MOSFET' s.

该等效电路模型能够应用于电力电子电路的CAD设计之中，满足工程应用的需要。

From the property of MOSFET, this paper presents the mechanism of pH-ISFET in detail and according to the site bind theories of electrochemistry, the author developed a more general and user-friendly SPICE model for the ISFET device with the use of MOSFET device model in SPICE;

从MOSFET器件性能出发，本文详细地讨论了ISFET器件的敏感机理；并且，根据电化学的表面基模型理论，借助SPICE内部的MOSFET器件模型提出了一种适于ISFET器件的简洁通用的行为描述。

IGBT is an electronic device in the early eighties, It belongs to a new power semiconductor devices. The characteristic of voltage input is along with the characteristic of low resistance on-state output. It can replace the GTR and power MOSFET devices in many industrial fields.

IGBT最早出现于上世纪八十年代初，被归为新型半导体功率器件，可以在很多工业领域替代GTR和功率MOSFT等器件。

Analytical Model of Subthreshold Current for Short Channel MOSFET

短沟道MOSFET亚阈值电流的解析模型

A model for inversion channel electron mobility of GaN n-MOSFET's is proposed based on semiconductor device physics.

在器件物理的基础上，提出了一种半经验的GaN n-MOSFET反型沟道电子迁移率模型。

Besides offering a physical insight into device physics, the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

该模型对设计全耗尽型非对称异质双栅应变硅MOSFET器件有着重要的指导作用。

As a practical junction termination techonology, field plate ( FP) has been widely used in power MOSFET, HVIC and SPIC with the merits of small occupied area, simple manufacturing process and so on.

场板技术作为一种实用的结终端技术，因其所占面积小、制造工艺简单等优点，在功率MOS器件、高压集成电路和智能功率集成电路中得到了广泛的应用。

Because of the capacitance bottom plate sampling and fully differential structure, the charge injection effect of switched-MOSFET and the clock feed-through effect induced signal error are eliminated. The linearity, signal to noise ratio ( SNR) and conversion-speed of the ADC are improved.

由于采用了电容下极板采样和全差分结构，能够有效地消除开关管的电荷注入效应和时钟馈通效应引起的采样信号的误差，提高模数转换器的线型度、信噪比和转换速度。

Control the big MOSFET's substrate always equal to the higher end voltage between the source and drain to prevent pn forwardly bias.

控制开关功率MOS管的衬底始终等于源漏中较高一端的电压，防止pn结正偏带来的衬底电流。

The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.

二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；

Compared with various power devices, power MOSFET were employed as the switches of two inverters.

分析对比了各种常用电力电子器件，选择了功率MOSFET作为一次逆变和二次逆变开关元件。

Power electronics' initial product is rectifier, thyristor, power MOSFET, power GTR and other products. However, these products all have their own shortcomings.

电力电子器件最初的产品是整流管、晶闸管、功率MOSFET、大功率GTR等产品、但是这些产品都有着自身的缺点。

This paper brings forward a new method of substituting power MOSFET whose switch time is shorter for thyristor in developing the pulsed fast discharge power supply of sulfur dimmer.

在研制硫双原子分子激光器脉冲电源时，采用了开通速度更快的功率MOSFET替代了快速晶闸管。

The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。