reactive etching的例句大全

Reactive ion beam etching process is one of the ultrafine machining techniques which have been rapidly developed in recent years. Patterns on the working pieces are made by sputtering effects and chemical reaction which occur when reactive ion beam bombard the solid surface.

反应离子束刻蚀技术是近年来发展起来的一种微细加工技术，它利用反应离子束轰击团体表面时发生的溅射效应和化学反应剥离加工工作上的几何图形。

The silicon wafers were highly polished by reactive ion beam etching ( RIBE) until surface micro-roughness was under 2 nm, and the hydrophilic glass and oxidized silicon wafer were dried and initially bonded in air for appropriate hours.

利用反应离子束蚀刻（RIBE）对基片进行抛光，使得键合表面达到2nm级的表面粗糙度.在大气的环境下将处理过的玻璃、Si基片干燥，进行预键合。

Effect of the mask on etching rate in a reactive ion etch mode

反应离子刻蚀中掩膜对刻蚀率的影响

Hardware's interface electrocircuit and designing idea of the reactive ion etching machine is explained in this thesis.

本文详细讨论了计算机控制的反应离子刻蚀机各个部分的硬件接口电路和设计思想。

Magnetically Enhanced Reactive Ion Etching of Ferroelectric PbZr_ ( 0.53) Ti_ ( 0.47) O_3 Thin Film

铁电PbZr（0.53）Ti（0.47）O3薄膜的磁增强反应离子刻蚀

A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors ( CRLA) was designed and fabricated by using reactive ion etching ( RIE).

采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的10单元InGaAs应变层单量子阱镇相列阵激光器。

Study on Reactive Ion Etching of Silicon in SF_6/ O_2/ CHF_3 Mixtures

SF6/O2/CHF3混合气体对硅材料的反应离子刻蚀研究

Photolith and reactive ion etching techniques are used for grating fabrication on silicon nitride film. The equal light density Dammann grating with 65 × 65 spot arrays are fabricated successfully.

在氮化硅膜上进行光栅图形的光刻和反应离子刻蚀，成功研制出65×65等光强分束Dammann光栅。

In this paper the etching ( RIE) of poly-Si of the electron cyclotron resonance ( ECR) reactive ion using CF 4 and Ar was reported.

报道了用CF4和氩气Ar作为工作气体的ECR反应离子刻蚀多晶硅（Poly Si）技术。

The means of fabricating computer optical element ( COE) are discussed. The new developments of gray-level mask, reactive ion beam etching and laser direct-writing in fabricating process are emphasized, and the application of COE in the space-focusing implement and lidar are introduced.

论述计算机光学元件制作的方法，着重介绍了灰度掩模技术，反应离子束刻蚀法和激光直写技术，并且说明了其在空间聚焦器上和激光雷达上的新应用。

Reactive Ion Etching of Sol Gel Derived PZT Ferroelectric Thin Films and Pt/ Ti Bottom

Sol-Gel法制备的铁电薄膜和Pt/Ti下电极的反应离子刻蚀技术

The deep reactive ion etching device is mainly applied to etching Si materials in the MEMS fabrications area.

深反应离子刻蚀（DRIE）设备，主要应用于MEMS器件制造中Si材料的深槽刻蚀[1]。

GaAs/ AlGaAs quantum dots were made by Electron Beam Lithography ( EBL) and Reactive Ion Etching ( RIE) on GaAs/ AlGaAs quantum well wafers. Their photoluminescence shows blue shift, the amount of blue shift increases with the decrease of quantum dot size.

采用电子束曝光和反应离子刻蚀的工艺，将GaAs／AlGaAs量子阱外延材料制成量子点阵，其光荧光谱显示出蓝移，并且蓝移量随着量子点直径尺寸的减少而增大。

The optical rib waveguides are designed and fabricated with SIMOX SOI wafers, using inductive coupled plasma reactive ion etching ( ICPRIE) process.

采用电感耦合反应离子刻蚀制备SOI脊形光波导器件，并给出了工艺流程。

The Reactive Ion Etching of Bi_2Ti_2O_7 Thin Films on Silicon Substrates and Its Image in Atomic Force Microscopy

Bi2Ti2O7薄膜的反应离子刻蚀及原子力显微镜研究

A bi-layer mask process is proposed and the technique of magnetic enhanced reactive ion etching ( MERIE) of SiC was studied to determine the optimal processing parameters.

提出了一种使用双层掩膜刻蚀SiC的方法，对磁增强反应离子刻蚀（MERIE）SiC的工艺进行了详细研究，得到了刻蚀的优化参数，为SiC热辐射器件的制作打下基础。

The gated silicon field emitter arrays ( FEA) with small gate aperture have been successfully fabricated by dry etching, including ion beam etching ( IBE) and reactive ion etching ( RIE).

利用离子束刻蚀（IBE）和反应离子刻蚀（RIE）等干法刻蚀方法来制造带栅极的场发射阴极阵列。

Reactive Ion Etching of InP in CH_4/ H_2 Mixtures

采用CH4/H2混合气对InP进行反应离子腐蚀的研究

Deep reactive ion etching ( Deep-RIE) is one of the most convenient and popular processes in MEMS fabrications.

反应离子深刻蚀（DRIE）是目前MEMS加工中便捷有效的主流加工工艺之一。

The rooting effect of the structure in deep reactive ion etching ( DRIE ) process was investigated.

给出了加速度计的制作工艺流程,研究了解决深 反应离子刻蚀 过程中的过刻蚀现象的方法.